ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Zhang, Siqing; Liu, Huan; Zhou, Jiuren; Liu, Yan; Han, Genquan; Hao, Yue

doi:10.1186/s11671-020-03468-w

Cited by 8 publications

(5 citation statements)

References 41 publications

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“…Using the corresponding simulation based on the modeling framework, we have described the important effects of mobile ions in amorphous dielectrics on SS characteristics of MIFETs. Furthermore, sub-60 mV/dec-swing characteristics of MIFETs have been achieved by simulation which is consistent with the experimental results [22].…”

Section: Discussionsupporting

confidence: 87%

“…MIFETs achieve a strong modulating efficiency of φs with considering the mobile ions, which produces a steep sub-kT/q SS. Thanks to the amplification effect of the semiconductor surface potential caused by ions movement in the dielectric, MIFETs can realize ultra-steep SS both in forward and reverse sweep, which is consistent with the experimental results [22]. This trend is not limited to the ballistic NEGF model but is generally valid since the assumption of ballistic transport does not significantly change the interaction of the mobile ions in a dielectric with the underlying channel.…”

Section: B Ferroelectric-like Behaviors Determined By Mobile Ionssupporting

confidence: 87%

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A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

Chen

Liu

Jin

et al. 2022

IEEE J. Electron Devices Soc.

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A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson's equation and non-equilibrium Green's function (NEGF), coupling with ion drift-diffusion equations. The simulation framework captures the dynamic distribution of mobile ions' concentrations within dielectric along the external electric field. TaN/amorphous-ZrO2/TaN capacitors are experimentally characterized for the model calibration. It is proved that the mobile ions dominate the ferroelectriclike behaviors in MIFETs. Sub-60 mV/decade can be achieved in MIFETs based on the proposed model, which is consistent with the experimental results.

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Section: Discussionsupporting

confidence: 87%

Section: B Ferroelectric-like Behaviors Determined By Mobile Ionssupporting

confidence: 87%

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

Chen

Liu

Jin

et al. 2022

IEEE J. Electron Devices Soc.

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“…The capacitance according to V GS and frequency can be seen in Figure S11c,d (Supporting Information), and the frequencydependent capacitance demonstrates the migration of V o + . [84] The change in the chemical bonds in the IGTO by applying +30 V on the top surface of MSM was studied through XPS measurement. The experimental setup for XPS is shown in Figure S12a (Supporting Information).…”

Section: Resultsmentioning

confidence: 99%

“…The capacitance according to V GS and frequency can be seen in Figure S11c,d (Supporting Information), and the frequency‐dependent capacitance demonstrates the migration of V o + . [ 84 ]…”

Section: Resultsmentioning

confidence: 99%

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

Lim

Lee

et al. 2022

Adv Funct Materials

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Artificial synapses are a key component of neuromorphic computing systems. To achieve high‐performance neuromorphic computing ability, a huge number of artificial synapses should be integrated because the human brain has a huge number of synapses (≈1015). In this study, a coplanar synaptic, thin‐film transistor (TFT) made of c‐axis‐aligned crystalline indium gallium tin oxide (CAAC–IGTO) is developed. The electrical characteristics of the biological synapses such as inhibitory postsynaptic current (IPSC), paired‐pulse depression (PPD), short‐term plasticity (STP), and long‐term plasticity at VDS = 0.1 V, are demonstrated. The measured synaptic behavior can be explained by the migration of positively charged oxygen vacancies (Vo+/Vo++) in the CAAC–IGTO layer. The mechanism of implementing synaptic behavior is completely new, compared to previous reports using electrolytes or ferroelectric gate insulators. The advantage of this device is to use conventional gate insulators such as SiO2 for synaptic behavior. Previous studies use chitosan, Ta2O3, SiO2 nanoparticles , Gd2O3, and HfZrOx for gate insulators, which cannot be used for high integration of synaptic devices. The metal–oxide TFTs, widely used in the display industry, can be applied to the synaptic transistors. Therefore, CAAC–IGTO synaptic TFT can be a good candidate for application as an artificial synapse for highly integrated neuromorphic chips.

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“…According to Boltzmann Tyranny [5], the body factor of conventional MOSFETs is greater than 1. A device developed to reduce the SS by making the body factor smaller than 1 is a Negative Capacitance (NC) FET [6][7][8][9][10][11]. NC FETs show the characteristics such as steep SS and high switching current ratio (Ion/Ioff), and are known as good candidates for low power consumption [12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect

Jung¹

2023

IIUMEJ

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An analytical Subthreshold Swing (SS) model is presented to observe the change in the SS when a stacked SiO2-metal-ferroelectric structure is used as the oxide film of a JunctionLess Double Gate (JLDG) MOSFET. The SS of 60 mV/dec or less is essential to reduce power dissipation while maintaining transistor performance. If a ferroelectric material with Negative Capacitance (NC) effect is used, the SS can be reduced below 60 mV/dec. The analytical SS model of the ferroelectric NC FET presented to analyze this was in good agreement with the SS derived from the relation between the drain current and gate voltage, using 2D potential distribution. As results were derived from the analytical SS model, it was found that it is possible to obtain an SS of 60 mV/dec or less even at 15 nm channel length by adjusting the thicknesses of the silicon channel, SiO2, and ferroelectric. In particular, the change in SS according to the ferroelectric thickness was saturated as the thickness of SiO2 increased and was almost constant as the thickness of the silicon channel decreased. ABSTRAK: Model Ayunan Subambang (SS) analitikal dibentangkan bagi melihat perubahan pada SS apabila struktur feroelektrik-logam-SiO2 bertindan digunakan sebagai filem oksida bagi MOSFET Dua Get Tanpa Simpang (JLDG). SS 60 mV/dec atau kurang adalah penting bagi mengurangkan pelesapan kuasa sambil mengekalkan prestasi transistor. Jika bahan feroelektrik dengan kesan Kapasitans Negatif (NC) digunakan, SS dapat dikurangkan bawah 60 mV/dek. Model SS analitikal feroelektrik NC FET yang digunakan bagi kajian ini adalah sesuai dengan SS yang diperoleh daripada hubungan antara arus serapan dan voltan get, menggunakan edaran potensi 2D. Dapatan terbitan melalui model SS analitikal, mendapati bahawa adalah mungkin bagi mendapatkan SS pada 60 mV/dek atau kurang walaupun panjang laluan adalah 15 nm dengan melaraskan ketebalan saluran silikon, SiO2, dan feroelektrik. Terutama apabila perubahan ketebalan feroelektrik SS adalah tepu ketika ketebalan SiO2 meningkat, dan hampir malar apabila ketebalan saluran silikon berkurang.

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ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Cited by 8 publications

References 41 publications

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

Artificial Synapse Based on Oxygen Vacancy Migration in Ferroelectric‐Like C‐Axis‐Aligned Crystalline InGaSnO Semiconductor Thin‐Film Transistors for Highly Integrated Neuromorphic Electronics

Analytical Model of Subthreshold Swing for Junctionless Double Gate MOSFET Using Ferroelectric Negative Capacitance Effect

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