A Physics-Based Model for Mobile-Ionic Field-Effect Transistors With Steep Subthreshold Swing

Abstract

A physics-based model and the corresponding simulation framework for the mobile-ionic field-effect transistor (MIFET) exhibiting the ferroelectric-like behaviors are innovatively proposed based on two-dimensional (2D) Poisson's equation and non-equilibrium Green's function (NEGF), coupling with ion drift-diffusion equations. The simulation framework captures the dynamic distribution of mobile ions' concentrations within dielectric along the external electric field. TaN/amorphous-ZrO2/TaN capacitors are experimentally characterized for the model calibration. It is proved that the mobile ions dominate the ferroelectriclike behaviors in MIFETs. Sub-60 mV/decade can be achieved in MIFETs based on the proposed model, which is consistent with the experimental results.

Performance improvement of a tunnel junction memristor with amorphous insulator film

“…The negative charges can be related to the metal ion vacancy and, eg. Zr vacancy for ZrO 2 film, and Al vacancy for Al 2 O 3 film [29,30], and the negative charges are mobile [31][32][33]. The underlying mechanism for the P-V loops is the switching of dipoles formed by the V O 2+ and negative charges, which is a long range P switching during the electric field cycling [34].…”