ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited <i>in situ</i> surface treatment

Babadi, Aein Shiri; Lind, Erik; Wernersson, Lars‐Erik

doi:10.1063/1.4945430

Cited by 14 publications

(14 citation statements)

References 30 publications

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“…Namely, in [25] it is observed that there is a maximum value of Δ fb between the two Al 2 O 3 /HfO 2 thicknesses ratios of 2.5 nm/3.0 nm and 0.5 nm/2.5 nm higher than or equal to 0.4 V. From our experiment a higher value of 1.2 V is obtained for the thicknesses ratio 1.0 nm/2.5 nm. This value is substantially higher than the value reported for pure HfO 2 [26] under similar conditions. Therefore, it can be concluded that the insertion of Al 2 O 3 between HfO 2 layers for the given thickness ratio substantially increases the trapping in the high-stacked layer.…”

Section: − Hysteresiscontrasting

confidence: 70%

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Novkovski

Paskaleva

Skeparovski

et al. 2018

Advances in Condensed Matter Physics

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Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO 2 /Al 2 O 3 stacks is presented. By applying our previously developed comprehensive model for MOS structures containing high-dielectrics on the − characteristics measured in the voltage range without marked degradation and charge trapping (from −3 V to +3 V), several parameters of the structure connected to the interfacial layer and the conduction mechanisms have been extracted. We found that the above analysis gives precise information on the main characteristics and the quality of the injection layer. − characteristics of stressed (with write and erase pulses) structures recorded in a limited range of voltages between −1 V and +1 V (where neither significant charge trapping nor visible degradation of the structures is expected to occur) were used in order to provide measures of the effect of stresses with no influence of the measurement process. Both trapped charge and the distribution of interface states have been determined using modified Terman method for fresh structures and for structures stressed with write and erase cycles. The proposed method allows determination of charge trapping and interface state with high resolution, promising a precise characterization of multilayered high permittivity stacks for use in charge trapping flash memories.

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Section: − Hysteresiscontrasting

confidence: 70%

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Novkovski

Paskaleva

Skeparovski

et al. 2018

Advances in Condensed Matter Physics

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“…Due to thermally excited minority carriers, there is an increase in capacitance again once the bias is reduced below −1 V, which is typical at room temperature for narrow band gap III–V materials such as InAs. 27 − 29 As the frequency is increased, the capacitive contributions from minority carriers and defect states are reduced. For both samples B ( Figure 5 a) and E ( Figure 5 c), the typical “butterfly”-shaped CV curves are measured, exhibiting two distinct peaks arising from the increased capacitance during polarization switching.…”

Section: Resultsmentioning

confidence: 99%

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1–xZr_xO₂

Athle

Persson

Irish

et al. 2021

ACS Appl. Mater. Interfaces

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Ferroelectric memories based on hafnium oxide are an attractive alternative to conventional memory technologies due to their scalability and energy efficiency. However, there are still many open questions regarding the optimal material stack and processing conditions for reliable device performance. Here, we report on the impact of the sputtering process conditions of the commonly used TiN top electrode on the ferroelectric properties of Hf 1– x Zr x O 2 . By manipulating the deposition pressure and chemistry, we control the preferential orientation of the TiN grains between (111) and (002). We observe that (111) textured TiN is superior to (002) texturing for achieving high remanent polarization ( P r ). Furthermore, we find that additional nitrogen supply during TiN deposition leads to >5× greater endurance, possibly by limiting the scavenging of oxygen from the Hf 1– x Zr x O 2 film. These results help explain the large P r variation reported in the literature for Hf 1– x Zr x O 2 /TiN and highlights the necessity of tuning the top electrode of the ferroelectric stack for successful device implementation.

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“…77 The charge trapping effects of gate-oxides on InAs nanowires typically onset at negative gate voltage and become more pronounced with increasingly negative voltage. [78][79][80] Indeed, in Supplementary Fig. S16 we show gate sweeps in both directions for the top-gate and back-gate on Device 2.…”

Section: Electrical Characterisation Of Hall-configuration Nanofin De...mentioning

confidence: 98%

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

et al. 2019

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We report a method for growing rectangular InAs nanofins with deterministic length, width and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, whilst retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and fourterminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5 − 5 × 10 17 cm −3 , corresponding to an approximate surface accumulation layer density 3 − 6× 10 12 cm −2 that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as 1200 cm 2 /Vs, field-effect mobilities as high as 4400 cm 2 /Vs and clear quantum interference structure at temperatures as high as 20 K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates and possibly other functional elements, e.g., patterned superconductor contacts, that may make them attractive options for future quantum information applications.Quantum devices were underpinned for several decades by the interfacial two-dimensional (2D) electron gas found in III-V semiconductor heterostructures. 1 A top-down approach to these systems is costly, with heterostructure complexity limited by interfacial strain issues.Bottom-up approaches have thus generated massive interest with a heavy focus on onedimensional (1D) nanostructures, i.e., nanowires, where small interfaces enable greater heterostructure versatility, including the ability to integrate III-Vs on low-cost Si substrates. [2][3][4] Researcher ingenuity has meant clever new devices still arise from the nanowire geometry even after two decades. That said, we suspect we are not alone in wishing for extra spatial dimensions to work with. An attractive idea would be to take the hexagonal nanowire cross-section and stretch it to obtain a 2D 'nanofin' such that two side-facets have much larger area. These could be transferred to a separate substrate to make devices featuring, e.g., multiple contacts and gates by conventional nanofabrication methods. This concept is impossible with vapor-liquid-solid approaches. 5,6 Here we demonstrate it is possible using selective-area epitaxy, 7,8 giving 2D InAs nanofins with precise size control, and opening a path to more interesting nanostructure shapes via appropriate mask design. 9Our 2D nanofins offer some interesting potential for nanoelectronics. Firstly, they offer

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ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

Cited by 14 publications

References 30 publications

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1–xZr_xO₂

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

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ZrO2 and HfO2 dielectrics on (001) n-InAs with atomic-layer-deposited in situ surface treatment

Cited by 14 publications

References 30 publications

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf1–xZrxO2

Regaining a Spatial Dimension: Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

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Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO₂/Al₂O₃ Stacks for Use in Charge Trapping Flash Memories

Effects of TiN Top Electrode Texturing on Ferroelectricity in Hf_1–xZr_xO₂