ZnS thin films deposition by thermal evaporation for photovoltaic applications

Benyahia, K.; Benhaya, A.; Aida, M.S.

doi:10.1088/1674-4926/36/10/103001

Cited by 42 publications

(13 citation statements)

References 24 publications

(2 reference statements)

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“…The effect of minimizing the reflectance of light is achieved, among others, by depositing an antireflection coating. The most popular antireflection coating used in photovoltaics are: SiO 2 , a-SiNx:H, TiO 2 , a-Si:C:H, ZnS, Ta 2 O 5 , SnxOx, SiNx, MgF 2 [1][2][3][4][5][6][7][8][9][10][11][12]. Titanium dioxide 4 and Ti(OCH(CH 3 ) 2 ) 4 , which react with H 2 O.…”

Section: Introductionmentioning

confidence: 99%

Structure and optical properties of TiO₂ thin films deposited by ALD method

2017

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This paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO 2 was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

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Section: Introductionmentioning

confidence: 99%

Structure and optical properties of TiO₂ thin films deposited by ALD method

2017

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“…The zinc sulfide semiconducting material has been used in the fabrication of many optoelectronics devices, because of its unique properties such as the quantum size effect [1][2] and the abnormal luminescence phenomenon [3][4][5]. ZnS is a potentially important material for antireflection coatings and window layer materials in heterojunction solar cells [6]. The non-stoichiometry is responsible for the conductivity in thin films, which is created during the deposition of a thin film.…”

Section: Introductionmentioning

confidence: 99%

Thickness-Dependent Structural, Electrical, and Optical Properties of ZnS Thin Films Deposited by Thermal Evaporation

Vishwakarma

2017

Ukr. J. Phys.

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Zinc sulfide (ZnS) thin films are deposited onto an ultrasonically clean glass substrate, by using the thermal evaporation technique at room temperature. The film thickness was varied in the range from 400 nm to 1300 nm. The X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive analysis of X-rays (EDAX) are used to characterize the structural properties of films. The electrical and optical properties of films are characterized with a dc two-point probe, the Hall effect, and ultraviolet visible absorption spectra. The XRD spectra indicate that the thin films have polycrystalline nature and possess the cubic structure with (111) preferential orientation. The diffraction patterns are sharpen with increase in the film thickness. Scanning electron microscope data disclose that the films have nanograins approximately 97.89 nm in size. A reduction in the resistivity shows that the films are semiconductors in nature. For a film thickness of 1200 nm, the maximum mobility is 26.03 × 10 1 cm 2 /Vs, minimum resistivity is 0.08 × 10 6 (Ohm•cm), and band gap is 3.26 eV. The film thickness has been optimized on the basis of the observed properties.

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“…Several methods have been used to prepare ZnS films by different research groups [11], such as magnetron sputtering [12,13], pulsed laser deposition, chemical bath deposition (CBD) [14], ultrasonic spray pyrolysis [15], electron gun evaporation [16] and thermal evaporation [12]. The latter is particularly interesting, due to its simplicity and cheapness.…”

Section: Fig 1 the Cubic Unit Cell Of Zinc Blende (A) And The Hexagmentioning

confidence: 99%

HRTEM, XPS and XRD characterization of ZnS/PbS nanorods prepared by thermal evaporation technique

Abadllah¹,

Assfour²,

Kakhia³

et al. 2020

Nanosystems: Phys. Chem. Math.

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Zinc sulfide (ZnS) and zinc sulfide/lead sulfide (ZnS/PbS) nanorods were grown on glass substrates using a thermal evaporation method. The morphology of the prepared samples has been studied by transmission electron microscopy (TEM), field-emission scanning electron microscopy (FE-SEM) and Scanning Electron Microscopy (SEM). Both differences and similarities in morphology between the samples have been discovered. In the ZnS/PbS sample, ZnS nanorods were formed with diameter less than 50 nm and length between 2000 and 3000 nm. The pure ZnS sample has dense structure and its thickness was about 200 nm. Samples were studied in detail using energy-dispersive X-ray spectroscopy (EDX). The surface chemical compositions of the samples were confirmed by means of X-ray photoelectron spectroscopy (XPS). The determination of the crystal structure using the X-ray diffraction revealed that two phases of ZnS, blende and wurtzite, are present in the sample after adding Pb, while only blende is identified in the pure ZnS sample.

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ZnS thin films deposition by thermal evaporation for photovoltaic applications

Cited by 42 publications

References 24 publications

Structure and optical properties of TiO₂ thin films deposited by ALD method

Structure and optical properties of TiO₂ thin films deposited by ALD method

Thickness-Dependent Structural, Electrical, and Optical Properties of ZnS Thin Films Deposited by Thermal Evaporation

HRTEM, XPS and XRD characterization of ZnS/PbS nanorods prepared by thermal evaporation technique

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ZnS thin films deposition by thermal evaporation for photovoltaic applications

Cited by 42 publications

References 24 publications

Structure and optical properties of TiO2 thin films deposited by ALD method

Structure and optical properties of TiO2 thin films deposited by ALD method

Thickness-Dependent Structural, Electrical, and Optical Properties of ZnS Thin Films Deposited by Thermal Evaporation

HRTEM, XPS and XRD characterization of ZnS/PbS nanorods prepared by thermal evaporation technique

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Structure and optical properties of TiO₂ thin films deposited by ALD method

Structure and optical properties of TiO₂ thin films deposited by ALD method