ZnO-on-GaN heterojunction light-emitting diode grown by vapor cooling condensation technique

Abstract

The growth of ZnO-on-GaN heterostructures was implemented using the vapor cooling condensation system. The technique thus developed was employed to fabricate both the p-GaN∕n-ZnO:In (p-n) and p-GaN∕i-ZnO∕n-ZnO:In (p-i-n) heterojunction light-emitting diodes (LEDs). A rectifying diodelike behavior was clearly observed from both the p-n and p-i-n heterojunction LEDs, with the forward turn-on voltage of 3V and the reverse breakdown voltage of −15V determined for the p-n heterojunction LEDs, compared to 7 and −23V, respectively, for the p-i-n heterojunction LEDs. Based on the results of photoluminescence and electroluminescence studies conducted on these LED structures, the ZnO layer responsible for the peak emission wavelength of 385nm were also verified experimentally.

Homostructured ZnO-based metal-oxide-semiconductor field-effect transistors deposited at low temperature by vapor cooling condensation system

“…However, the efforts aimed at the ZnO-based homojunction structures have been devoted, recently. Based on the stable intrinsic and pZnO films deposited using the vapor cooling condensation system [15][16][17] and the resulting optoelectronic devices were previously reported [18,19], the homostructured ZnO-based metal-oxidesemiconductor field-effect transistors (MOSFETs) were fabricated and studied in this work.…”

Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

“…For preparation of films, many techniques have been used including vapor cooling condensation method [18], magnetron sputtering [3,13], chemical bath deposition [19], metal organic chemical vapour deposition (MOCVD) [20], spray pyrolysis [21], plasma-assisted molecular beam epitaxy (PA-MBE) [22,23], reactive electron beam (ebeam) evaporation system [24], dielectric barrier discharged pulsed laser deposition (DBD-PLD) [25], filtered vacuum (cathodic) arc deposition (FVAD, FCVD) [26,27], spin coating method [14], sputtering [15] etc. Pulsed filtered cathodic vacuum arc deposition (PFCVAD) is a common technique to prepare oxide and removal of macroparticles in arc evaporation.…”

Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

“…In addition, more efficient exciton-related emission process can be expected from LED based on ZnO/GaN superlattice or quantum wells structure [13]. There have been widespread reports on the n-ZnO/p-GaN heterostructure LED since n-ZnO and p-GaN are more easy to fabricate [14][15][16]. Nevertheless, the p-ZnO/n-GaN heterojunction device has not been well examined yet due to the lack of reproducible and high quality p-type ZnO material.…”