Ultraviolet electroluminescence from ZnO-based light-emitting diode with p-ZnO:N/n-GaN:Si heterojunction structure

Investigations on the Cosputtered ITO-ZnO Transparent Electrode Ohmic Contacts to n-GaN

“…Figure 4b shows the elemental distributions over the Ti/n-GaN interface conducted from the AES depth profile. The outdiffusion of the N atoms was observed clearly at the Ti/n-GaN interface, resulting in the increase in the electron concentration at the n-GaN surface associated with large amounts of the VN donors [17,18]. decreased significantly to about 200 Ω at a bias of 2V, its I-V curve still was somewhat insufficient for achieving ohmic contact.…”

“…Figure 4b shows the elemental distributions over the Ti/n-GaN interface conducted from the AES depth profile. The outdiffusion of the N atoms was observed clearly at the Ti/n-GaN interface, resulting in the increase in the electron concentration at the n-GaN surface associated with large amounts of the VN donors [17,18]. The above-mentioned structures' contact to the n-GaN epilayer demonstrated that the transparent electrodes, such as ITO and cosputtered ITO-ZnO films, have a nonlinear I-V curve even when annealed at an elevated temperature, whereas the opaque Ti/Al system had ohmic contact behavior when contacting the n-GaN epilayer without a post-annealing treatment.…”

High optical quality ZnO films grown on graphite substrate for transferable optoelectronics devices by ultrasonic spray pyrolysis

“…It has been regarded as one of the most promising candidates for the next generation of short-wavelength light emitting diode and lasing devices [1][2][3][4]. Recent improvements in the control of background conductivity of ZnO and demonstrations of p-type doping have intensified interest in this material for applications in optoelectronic field [5,6].…”

“…An important and key issue with the optoelectronics application of ZnO material is the selection of substrates, since the properties of ZnO based film and the subsequent device process are highly dependent on the employed substrates. So far, a variety of methods have been employed to fabricate high-quality ZnO films on various singlecrystal substrates, such as GaAs, sapphire, ZnO, ScMgAlO 4 and Si [7][8][9][10][11]. Nevertheless, for some special applications such as large area foldable displayer and high-power devices, it is necessary to transfer crystalline ZnO films onto foreign substrates, such as flexible plastic or metal substrates [12,13].…”

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

“…As a result, the structure of p-ZnO/n-GaN was proposed by some scholars as an alternative approach to achieve efficient exciton-related emission in the ZnO side. [8][9][10] Almost all reported LEDs based on p-ZnO/n-GaN structures were fabricated on insulating c-plane Al 2 O 3 substrates and, consequently, a lateral conducting mode was induced. It is generally accepted that such conducting mode always suffers from the problems such as poor heat dissipation and current crowding, as well as high on-state resistance.…”