Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

Tüzemen, Ebru Şenadım; Kara, Kamuran; Takçı, Deniz Kadir; Esen, Ramazan

doi:10.1007/s12648-014-0569-4

Cited by 3 publications

(2 citation statements)

References 51 publications

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“…Additionally, the (002) crystal face exhibited the strongest peak among all samples, suggesting all the ZnO-based samples grew along the C-axis. Compared with the undoped ZnO samples, the dominant peak (002) of N-doped and Al-N-co-doped ZnO samples slightly shifted towards a lower diffraction angle, while the dominant peak of Aldoped ZnO sample shifted slightly towards a higher diffraction angle (Figure 3c), indicating that Al and N atoms were incorporated into the ZnO lattice [24][25][26]. (HR)TEM and EDS mapping images of the undoped, Al-doped, N-doped, and Al-Nco-doped ZnO nanorods are shown in Figure 4.…”

Section: Morphologic and Structural Characterizations Of The Undoped ...mentioning

confidence: 98%

Enhanced Field Emission and Low-Pressure Hydrogen Sensing Properties from Al–N-Co-Doped ZnO Nanorods

Tu,

Qian,

Dong

et al. 2024

Nanomaterials

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ZnO nanostructures show great potential in hydrogen sensing at atmospheric conditions for good gas adsorption abilities. However, there is less research on low-pressure hydrogen sensing performance due to its low concentration and in-homogeneous distributions under low-pressure environments. Here, we report the low-pressure hydrogen sensing by the construction of Al–N-co-doped ZnO nanorods based on the adsorption-induced field emission enhancement effect in the pressure range of 10−7 to 10−3 Pa. The investigation indicates that the Al–N-co-doped ZnO sample is the most sensitive to low-pressure hydrogen sensing among all ZnO samples, with the highest sensing current increase of 140% for 5 min emission. In addition, the increased amplitude of sensing current for the Al–N-co-doped ZnO sample could reach 75% at the pressure 7 × 10−3 Pa for 1 min emission. This work not only expands the hydrogen sensing applications to the co-doped ZnO nanomaterials, but also provides a promising approach to develop field emission cathodes with strong low-pressure hydrogen sensing effect.

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Section: Morphologic and Structural Characterizations Of The Undoped ...mentioning

confidence: 98%

Enhanced Field Emission and Low-Pressure Hydrogen Sensing Properties from Al–N-Co-Doped ZnO Nanorods

Tu,

Qian,

Dong

et al. 2024

Nanomaterials

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“…In the previous papers on ZnO thin films grown by PFCVAD, it has been demonstrated that such films have low resistivities and high optical transmittances in the UV/visible region [28][29][30][31]. To date, the optical and structural properties of unintentionally n-doped ZnO thin films, the effect of growth conditions on the quality of ZnO thin films, and p-type doping of ZnO thin films grown by PFCVAD have been studied by Senadim and Kara et al [32][33][34]. Kara et al also reported that post-thermal annealing of ZnO thin films grown by PFCVAD improves the crystal quality, changing the structure of ZnO:Al from amorphous to crystalline upon annealing at 600 °C [33].…”

Section: Introductionmentioning

confidence: 99%

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

et al. 2022

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In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an increasing in the diameter of grains from 10.5 to 18.3 nm as a function of annealing temperature results in a red shift in the cut-off wavelength of the photodetector from 3.25 eV (381 nm) to 3.23 eV (383 nm). It is demonstrated that the sensitivity and the speed (rise/fall times) of the ZnO thin film based MSM photodetectors enhances with increasing post growth annealing temperature of ZnO thin film due to the increase in the absorption coefficient and the decrease of the total area of the grain boundaries due to the larger grain sizes formation in ZnO thin films with increasing thermal annealing temperature.

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Effect of thermal treatment on points defects of Al-N codoped ZnO films

et al. 2018

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The effect of annealing temperature on the structural properties of Al-N codoped ZnO films were studied by X-ray diffraction, photoluminescence and Raman spectroscopy. ZnO films were deposited by sputtering technique on silicon substrates at 20 ºC, Al-concentration was kept constant and N-flow was changed to 6, 12 and 15 sccm. A thermal treatment was performed by annealing the sample during 30 minutes at 300, 400, 500, 600 and 700 °C. Before annealing, Raman spectra shows two vibration modes located at 275 and 580 cm-1 associated to the nitrogen incorporation and the presence of point defects. Both Raman intensities of modes I275 and I580 decreases when the nitrogen flow increases from 6 to 12 and 15 sccm, which is originated by a decreasing interstitial defects density. The improving of the crystal quality was confirmed by x-ray diffraction and room temperature photoluminescence measurements. After annealing, in the Raman spectra it was observed that I275 increases as the temperature increase, reaches a maximum intensity between 500 and 600 °C, and decreases for higher temperatures. X-ray diffraction measurements show that after annealing the compressive stress decrease progressively as the annealing temperature increase. This study suggests that 275 Raman mode could be used to estimate the optimal thermal treatment in order to achieve pdoping ZnO.

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Comparison of N-doped ZnO and N–Al codoped ZnO thin films deposited by pulsed filtered cathodic vacuum arc deposition

Cited by 3 publications

References 51 publications

Enhanced Field Emission and Low-Pressure Hydrogen Sensing Properties from Al–N-Co-Doped ZnO Nanorods

Enhanced Field Emission and Low-Pressure Hydrogen Sensing Properties from Al–N-Co-Doped ZnO Nanorods

Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector

Effect of thermal treatment on points defects of Al-N codoped ZnO films

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