ZnO field-effect transistor

Boesen, G.F.; Jacobs, John E.

doi:10.1109/proc.1968.6813

Cited by 64 publications

(31 citation statements)

References 4 publications

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“…Oxide TFTs have a long history that extends from the mid-1960s [34,35], but there was a long lull until the report of SnO 2 :Sb TFTs combined with a ferroelectric gate in 1996 [36], although some unpublished development work had been conducted. Th e oxide TFT fever started in 2003 with reports of several crystalline oxide TFTs using ZnO [37][38][39][40] and InGaZnO 4 [41] channels.…”

Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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A morphous semiconductors have created a new area of electronics known as 'giant microelectronics' typifi ed by devices such as solar cells and active-matrix (AM) fl at-panel displays. Single-crystalline semiconductor technology, typifi ed by crystal silicon electronics, is unsuitable for such applications, whereas amorphous or polycrystalline fi lms can be easily formed over large areas of greater than 1 m 2 at low temperature (e.g. < 400 °C) on both glass and plastic substrates, facilitating these new applications. Due to carrier scattering and trapping at defects on grain boundaries in polycrystalline materials (the grain boundary problem), hydrogenated amorphous silicon (a-Si:H) has been used more widely than polycrystalline silicon (p-Si) for practical large-size applications. However, the critical obstacles to be overcome to realize a-Si:H in future applications are low mobility (< 1 cm 2 /V s) and instability against electric stress and photo-illumination.In late 2004, we reported that an amorphous oxide semiconductor (AOS) with the composition a-InGaZnO 4 (a-IGZO) can be applied in the fabrication of fl exible, transparent thin-fi lm transistors (TFTs) having much improved performance compared to conventional TFTs based on a-Si:H and organic materials [1]. AOS materials have superior characteristics to conventional semiconductors, and therefore AOS TFT technology has grown very rapidly toward the realization of TFT backplanes for next-generation flat-panel displays. As summarized in Figure 1, a variety of prototype AM displays have been demonstrated by several companies within the last fi ve years since the fi rst report of AOS TFTs. Herein, we review the unique characteristics of AOS materials in relation to their TFT characteristics, and discuss why AOSs have such attractive electrical properties related to the electronic structures specifi c to transparent oxides. Active-matrix displays and circuits based on AOS TFT arraysTh e fi rst AOS-TFT was reported in late 2004 (see Figure 1). Just one year later, Toppan Printing quickly followed with the fi rst AM display based on AOS as a fl exible black-and-white electronic paper (e-paper) using a-IGZO TFTs

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Section: Brief History Of Aossmentioning

confidence: 99%

Material characteristics and applications of transparent amorphous oxide semiconductors

2010

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“…In this way, the opaque Al gate electrode could act as a shielding layer for the UV light. 46 Subsequently, TFTs with single crystal lithiumdoped zinc oxide (ZnO:Li) hydrotermically grown from solution, 47 as well as SnO 2 deposited from vapor phase reaction, were presented. 48 Nevertheless, none of these two devices outperformed the results shown by Klasens and Koelmans.…”

Section: A Historical Perspectivementioning

confidence: 99%

Metal oxide semiconductor thin-film transistors for flexible electronics

Petti

Münzenrieder

Vogt

et al. 2016

Applied Physics Reviews

549

430

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“…The world's first effort to develop oxide TFTs dates back to 1964, with the evaporation of SnO 2 as the channel layer on a glass substrate . In 1986, a hydrothermally grown single‐crystal Li‐doped ZnO TFT was proposed by Boesen and Jacobs . Ten years later, SnO 2 :Sb and In 2 O 3 TFTs were reported by using pulse laser deposition (PLD) and sputtering .…”

Section: Metal Oxide Tftsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

160

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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ZnO field-effect transistor

Cited by 64 publications

References 4 publications

Material characteristics and applications of transparent amorphous oxide semiconductors

Material characteristics and applications of transparent amorphous oxide semiconductors

Metal oxide semiconductor thin-film transistors for flexible electronics

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

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