Zinc oxide nanowire gas sensors: Fabrication, functionalisation and devices

Tiwale, Nikhil

doi:10.1179/1743284714y.0000000747

Cited by 41 publications

(28 citation statements)

References 139 publications

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“…Moreover, its suitability as matrix material for doping with number of elements such as aluminium [7], indium [3,[8][9][10][11], gallium [3,9,10], tin [11][12][13], magnesium [14] allows for modulation of its properties. This has resulted in ZnO being utilized for a number of applications such as gas sensing [15][16][17][18], photovoltaics [14,19], UV photodetectors [20][21][22], non-volatile memories [23][24][25], and piezoelectric generators [18,19,26].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate

Tiwale

Senanayak

Rubio‐Lara

et al. 2019

Electron. Mater. Lett.

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Solution processing of metal oxide-based semiconductors is an attractive route for low-cost fabrication of thin films devices. ZnO thin films were synthesized from one-step spin coating-pyrolysis technique using zinc neodecanoate precursor. X-ray diffraction (XRD), UV-visible optical transmission spectrometry and photoluminescence spectroscopy suggested conversion to polycrystalline ZnO phase for decomposition temperatures higher than 400 °C. A 15 % precursor concentration was found to produce optimal TFT performance on annealing at 500 °C, due to generation of sufficient charge percolation pathways. The device performance was found to improve upon increasing the annealing temperature and the optimal saturation mobility of 0.1 cm 2 V −1 s −1 with I ON /I OFF ratio ~ 10 7 was achieved at 700 °C annealing temperature. The analysis of experimental results based on theoretical models to understand charge transport envisaged that the grain boundary depletion region is major source of deep level traps and their effective removal at increased annealing temperature leads to evolution of transistor performance.

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Section: Introductionmentioning

confidence: 99%

Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate

Tiwale

Senanayak

Rubio‐Lara

et al. 2019

Electron. Mater. Lett.

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“…In recent years, one-dimensional (1D) nanostructured materials have been regarded as one of the most exciting materials for developing new sensing materials and devices due to their excellent properties such as high surface-to-volume ratio, good chemical and thermal stabilities under different operating conditions 5 – 19 . One of the most common 1D nanomaterials that has been used as gas sensors is zinc oxide (ZnO) nanowires 12 – 23 .…”

Section: Introductionmentioning

confidence: 99%

The Zn12O12 cluster-assembled nanowires as a highly sensitive and selective gas sensor for NO and NO2

Yong

Zhou

et al. 2017

Sci Rep

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Motivated by the recent realization of cluster-assembled nanomaterials as gas sensors, first-principles calculations are carried out to explore the stability and electronic properties of Zn12O12 cluster-assembled nanowires and the adsorption behaviors of environmental gases on the Zn12O12-based nanowires, including CO, NO, NO2, SO2, NH3, CH4, CO2, O2 and H2. Our results indicate that the ultrathin Zn12O12 cluster-assembled nanowires are particularly thermodynamic stable at room temperature. The CO, NO, NO2, SO2, and NH3 molecules are all chemisorbed on the Zn12O12-based nanowires with reasonable adsorption energies, but CH4, CO2, O2 and H2 molecules are only physically adsorbed on the nanowire. The electronic properties of the Zn12O12-based nanowire present dramatic changes after the adsorption of the NO and NO2 molecules, especially their electric conductivity and magnetic properties, however, the other molecules adsorption hardly change the electric conductivity of the nanowire. Meanwhile, the recovery time of the nanowire sensor at T = 300 K is estimated at 1.5 μs and 16.7 μs for NO and NO2 molecules, respectively. Furthermore, the sensitivities of NO and NO2 are much larger than that of the other molecules. Our results thus conclude that the Zn12O12-based nanowire is a potential candidate for gas sensors with highly sensitivity for NO and NO2.

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“…The ionic compound CsI columns are difficult to obtain by electrochemical ionic deposition method. Although various methods were used to fabricate different nanowires in the past, [99][100][101][102][103][104][105] the mechanical injection method seems to be the most suitable one to fabricate the CsI nanowires which it does not require any chemical precursors. Their size can be controlled by the AAO pores, and chemical doping level (such as Tl or Na), by the composition of starting raw materials.…”

Section: Resultsmentioning

confidence: 99%

Fabrication of Nanoscale Cesium Iodide (CsI) Scintillators for High-Energy Radiation Detection

Chen¹,

Hun²,

Chen³

et al. 2015

Rev Nanosci Nanotech

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The CsI-based scintillators have been widely used for X-or gamma-ray detections. It has been known that columnar scintillators favor the detections with higher efficiency and spatial resolution. In this paper, we report a facile and low-cost method to fabricate submicron nanoscale CsI columns. We integrated the thermodynamic calculations, positive chamber design, mold design, electrochemical bath design, anodization process, and solidification techniques to fabricate such submicron CsI columns. When the CsI melt is confined to AAO channels with a high aspect ratio, stable CsI columns solidified with smooth surfaces, and free of dendrites or grain boundaries. Different solidification approaches have been attempted, including mechanical injection in vacuum under a negative pressure, injection at 1 atm, 3 atm and 25 atm using Ar gas only, and mechanical injection with 1.6 atm Ar pressure. The mechanical injection or high-pressure Ar injection at 25 atm produced good filling of CsI melt into AAO channels. Such CsI columns inside the smooth AAO walls enable the highenergy radiation detection with high light emission for pixelated scintillator applications.

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Zinc oxide nanowire gas sensors: Fabrication, functionalisation and devices

Cited by 41 publications

References 139 publications

Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate

Optimization of Transistor Characteristics and Charge Transport in Solution Processed ZnO Thin Films Grown from Zinc Neodecanoate

The Zn12O12 cluster-assembled nanowires as a highly sensitive and selective gas sensor for NO and NO2

Fabrication of Nanoscale Cesium Iodide (CsI) Scintillators for High-Energy Radiation Detection

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