Zinc oxide films grown by galvanic deposition from 99% metals basis zinc nitrate electrolyte

A combined experimental and first-principles study is performed to study the origin of conductivity in ZnO:Al nanoparticles synthesized under controlled conditions via a reflux route using benzylamine as a solvent. The experimental characterization of the samples by Raman, nuclear magnetic resonance (NMR) and conductivity measurements indicates that upon annealing in nitrogen, the Al atoms at interstitial positions migrate to the substitutional positions, creating at the same time Zn interstitials. We provide evidence for the fact that the formed complex of Al and Zn corresponds to the origin of the Knight shifted peak (KS) we observe in Al NMR. As far as we know, the role of this complex has not been discussed in the literature to date. However, our first-principles calculations show that such a complex is indeed energetically favoured over the isolated Al interstitial positions. In our calculations we also address the charge state of the Al interstitials. Further, Zn interstitials can migrate from Al and possibly also form Zn clusters, leading to the observed increased conductivity.

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Zinc oxide films grown by galvanic deposition from 99% metals basis zinc nitrate electrolyte

Abstract: The use of relatively low purity zinc nitrate for electrochemical deposition of compact ZnO films is attractive for large scale production because of the cost saving potential.

Cited by 3 publications

References 43 publications

Oxygen reduction at electrodeposited ZnO layers in alkaline solution

Oxygen reduction at electrodeposited ZnO layers in alkaline solution

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A novel explanation for the increased conductivity in annealed Al-doped ZnO: an insight into migration of aluminum and displacement of zinc

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