Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

Calnan, Sonya; Riedel, Wiebke; Gledhill, Sophie; Stannowski, Bernd; Lux‐Steiner, Martha Ch.; Schlatmann, Rutger

doi:10.1016/j.tsf.2015.05.051

Cited by 3 publications

(3 citation statements)

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“…Among them, the usage of B doping is less common than of other elements. For deposition of B doped ZnO, inexpensive and uncomplicated methods, such as spray pyrolysis [10,11], sol gel [12][13][14] and electrodeposition, [15][16][17][18] can be applied. Chronoamperometry, one of the electrodeposition techniques, is widely used for film deposition because it is simple and economical.…”

Section: Introductionmentioning

confidence: 99%

“…According to this report, boron doping increasing from 0.41 % to 1.1 %, in this potential range, caused a decrease in electrical resistivity. In the study published by Calnan et al [17], B doped ZnO films were prepared by using zinc nitrate and boric acid solutions (1 at.% to 20 at.% B ratios) and SEM images presented the existence of grains with hexagonal faces for low B contents and the clustering of these grains for 20 at.% B content. Tsin et al [18] revealed that an increase in boric acid concentration changed the size of the columns from 180 nm to 600 nm and PL emission peak of the films shifted to higher energy.…”

Section: Introductionmentioning

confidence: 99%

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FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Çağlar

Ilıcan

Çağlar

2017

Materials Science-Poland

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In this study, the effect of boron (B) incorporation into zinc oxide (ZnO) has been investigated. The undoped, 2 at.%. and 4 at.% B doped ZnO films were deposited on p-type silicon (Si) substrates by electrodeposition method using chronoamperometry technique. Electrochemical depositions were performed by applying a constant potentiostatic voltage of 1.1 V for 180 min at 90 °C bath temperature. To analyze the surface morphology, field emission scanning electron microscopy (FESEM) was used and the results revealed that while a small amount of boron resulted in smoother surface, a little more incorporation of boron changed the surface morphology to dandelion-like shaped rods on the whole surface. By using X-ray diffraction (XRD) analysis, the crystal structures of the films were detected and the preferred orientation of the ZnO, which exhibited polycrystalline and hexagonal wurtzite structure, changed with B doping. For the estimation of the optical band gap of obtained films, UV-Vis diffuse reflectance spectra (DRS) of the films were taken at room temperature and these data were applied to the Kubelka-Munk function. The optical band gap of ZnO narrowed due to incorporation of B, which was confirmed by red-shift.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Çağlar

Ilıcan

Çağlar

2017

Materials Science-Poland

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“…Inspired by these pioneering works, a lot of studies have been published to develop and optimize zinc oxide electrodeposition, understand its growth mechanism, and characterize its electrical and optical properties. − However, few studies have taken an interest in the doping of zinc oxide by this deposition technique. Recently, it has been shown that chloride used as a support electrolyte has a doping effect on electrodeposited zinc oxide. − Chlorine may represent an alternative to the aluminum classically considered in zinc oxide. − Indeed, aluminum doping agent is quasi-insoluble at the pH (close to neutral) needed for the electrodeposition process.…”

Section: Introductionmentioning

confidence: 99%

Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film

Tsin

Thomere

Bris

et al. 2016

ACS Appl. Mater. Interfaces

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Highly transparent and conductive materials are required for many industrial applications. One of the interesting features of ZnO is the possibility to dope it using different elements, hence improving its conductivity. Results concerning the zinc oxide thin films electrodeposited in a zinc perchlorate medium containing a boron precursor are presented in this study. The addition of boron to the electrolyte leads to significant effects on the morphology and crystalline structure as well as an evolution of the optical properties of the material. Varying the concentration of boric acid from 0 to 15 mM strongly improves the compactness of the deposit and increases the band gap from 3.33 to 3.45 eV. Investigations were also conducted to estimate and determine the influence of boric acid on the electrical properties of the ZnO layers. As a result, no doping effect effect by boron was demonstrated. However, the role of boric acid on the material quality has also been proven and discussed. Boric acid strongly contributes to the growth of high quality electrodeposited zinc oxide. The high doping level of the film can be attributed to the perchlorate ions introduced in the bath. Finally, a ZnO layer electrodeposited in a boron rich electrolyte was tested as front contact of a Cu(In, Ga)(S, Se)2 based solar cell. An efficiency of 12.5% was measured with a quite high fill factor (>70%) which confirms the high conductivity of the ZnO thin film.

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The effect of spinning cycle on structural, optical, surface and photocatalytic properties of sol–gel derived ZnO films

Atay

Gultepe

2021

J Sol-Gel Sci Technol

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Comparison of the influence of boron and aluminium doping on the material properties of electrochemically deposited ZnO films

Cited by 3 publications

References 47 publications

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

FESEM, XRD and DRS studies of electrochemically deposited boron doped ZnO films

Influence of a Boron Precursor on the Growth and Optoelectronic Properties of Electrodeposited Zinc Oxide Thin Film

The effect of spinning cycle on structural, optical, surface and photocatalytic properties of sol–gel derived ZnO films

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