Zeroth-order half-wave plates of LiNbO<sub>3</sub> for integrated optics applications at 1.55 μm

Radojevic, Antonije M.; Osgood, Richard M.; Levy, M.; Kumar, Abhishek; Bakhru, H.

doi:10.1109/68.896338

Cited by 26 publications

(17 citation statements)

References 8 publications

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“…Implantation-induced layer transfer processes have previously been reported for the layer transfer of Si, InP, Ge, and diamond. [4,5] Recently, layer splitting and transfer of ferroelectric materials such as LiNbO 3 , LiTaO 3 , KTaO 3 , SrTiO 3 , and BaTiO 3 have also been demonstrated through a sacrificial wet etching and anodic bonding process combined with a crystal ion slicing method. [6][7][8][9][10][11] However, because of large mismatch in the coefficient of thermal expansion (CTE) between LiNbO 3 ((7.5-14.4) × 10 -6 m°C -1 , depending on cutting orientation) and Si (2.6 × 10 -6 m°C -1…”

mentioning

confidence: 99%

“…LiNbO 3 optical waveguides are of great importance in electro-optic applications [2,3] and could be substantially improved through a successful thin-film integration technology. Direct wafer bonding and layer-transfer techniques are promising methods for fabricating high-quality single-crystal thin films without heteroepitaxial growth and the attendant materials-defect problems associated with lattice mismatch between the thin-film layer and the silicon substrate.…”

mentioning

confidence: 99%

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Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

et al. 2006

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Ferroelectric materials have found extensive application in microelectronics, microelectromechanical systems (MEMS), and electro-optic devices.[1] Ferroelectric oxides have been used in modulators, resonators, piezoelectric components, infrared-detector elements, acoustic delay lines, microwave-tunable devices, and in data processing and memory elements. The use of thin-film layers of such ferroelectric oxides can dramatically reduce device operating voltages and enable monolithic device integration. However, the integration of high-quality ferroelectric thin films in planar device architectures on silicon substrates remains a technological challenge. A promising candidate material for such thin-film integration is LiNbO 3 , a well-known nonlinear optical crystal that exhibits an extraordinary spontaneous polarization (71 lC cm -2). LiNbO 3 optical waveguides are of great importance in electro-optic applications [2,3] and could be substantially improved through a successful thin-film integration technology. Direct wafer bonding and layer-transfer techniques are promising methods for fabricating high-quality single-crystal thin films without heteroepitaxial growth and the attendant materials-defect problems associated with lattice mismatch between the thin-film layer and the silicon substrate. Implantation-induced layer transfer processes have previously been reported for the layer transfer of Si, InP, Ge, and diamond. [4,5] Recently, layer splitting and transfer of ferroelectric materials such as LiNbO 3 , LiTaO 3 , KTaO 3 , SrTiO 3 , and BaTiO 3 have also been demonstrated through a sacrificial wet etching and anodic bonding process combined with a crystal ion slicing method. [6][7][8][9][10][11] However, because of large mismatch in the coefficient of thermal expansion (CTE) between LiNbO 3 ((7.5-14.4) × 10 -6 m°C -1 , depending on cutting orientation) and Si (2.6 × 10 -6 m°C -1 ), thermal mismatch-induced stress at the LiNbO 3 /Si interface occurring during heating and cooling steps in the direct bonding and layer transfer process is quite large in comparison to other material systems. This complicates the development of layer transfer and bonding processes for the integration of LiNbO 3 on silicon.Laser lift off (LLO) and laser-induced forward transfer methods have been widely investigated as an alternative approach to the integration of PZT (Pb(Zr,Ti)O 3 ), GaN, and Si thin films. These methods employ excimer laser irradiation and an intermetallic bonding layer (PdIn) as an adhesive layer. [12][13][14] However, for the microphotonic device applications anticipated in this study, the LiNbO 3 thin film needs to be formed directly on the silicon substrate without any intermediate metallic adhesive layer.In this communication, we introduce a novel method of thin-film integration using laser-induced layer transfer in conjunction with ion implantation to integrate single-crystal LiNbO 3 thin films on silicon substrates. Figure 1 represents the overall process. Light ions such as hydrogen and helium are implanted i...

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mentioning

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mentioning

confidence: 99%

Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

et al. 2006

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“…The former include compact polarization-control building blocks for integrated optics circuits, 22,27 as well as low-noise pyroelectric optical detectors. 28 The latter are related to conventional LiNbO 3 devices transferred onto thin CIS films, namely passive optical circuits with annealed proton exchanged waveguides, 25 and also as active circuits in the form of thin-film optical modulators.…”

Section: Cis Film Morphologymentioning

confidence: 99%

“…21,22 Thermal shock, in a form of a rapid temperature increase is applied to the implanted material, resulting in the lateral pressure release in the sacrificial (implanted) layer, and a subsequent separation of the CIS film from its parent wafer. The underlying physical mechanism for thermal lift-off is in fact similar to the wet-etch process described above.…”

Section: Thermal Shock Cis Lift-offmentioning

confidence: 99%

“…The device had an extinction ratio >30dB at 1550 µm wavelength. 13 The most challenging task is the fabrication of thin-film Faraday rotators. The currently available 45°Faraday rotators have a thickness of typically about 0.5 mm and are therefore not suitable for the hybrid integration into planar lightwave circuits, simply because the diffraction loss that they would incur is too large.…”

Section: Integrated Magneto-optic Isolatorsmentioning

confidence: 99%

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Hybrid integrated tunable optical transmitter subsystem on a chip

Eldada¹,

Newburgh²,

Fujita³

et al. 2002

SPIE Proceedings

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The need for tunable optical transmitters in optical networking is growing at a rapid rate. A tunable optical transmitter is the combination of a tunable laser, an isolator, and a modulator. Although today lasers and modulators could be integrated together on a single chip, an integrated component of this type would not be useful because the absence of an isolator between the two elements would cause optical reflections to reach the laser, leading to a high level of frequency chirp and relaxation oscillations. Therefore discrete external modulators are used, and lasers are coupled to them through discrete optical isolators. We report on recent developments in integrated active, thermo-optic, magneto-optic and electro-optic technologies that enable the production of a fully integrated tunable transmitter. This transmitter consists of a planar polymer waveguide circuit that is built on a silicon chip and in which films of a variety of materials are embedded. This subsystem on a chip includes a laser chip coupled to a thermo-optically tunable planar polymeric filter resulting in a tunable external cavity laser; an integrated magneto-optic isolator consisting of a planar polymer waveguide with inserted thin films of yttrium iron garnet for Faraday rotation, crystal ion sliced LiNbO 3 for half-wave retardation, and polarizers; and an electro-optic modulator consisting of a crystal ion sliced LiNbO 3 thin film patterned with a Mach-Zehnder interferometer and grafted into the polymer circuit, capable of operating with less than 5 Volts at modulation speeds up to 40 GHz.

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Single-Crystal Lithium Niobate Films by Crystal Ion Slicing

Levy¹,

Radojevic²

2004

Wafer Bonding

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Zeroth-order half-wave plates of LiNbO₃ for integrated optics applications at 1.55 μm

Cited by 26 publications

References 8 publications

Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Hybrid integrated tunable optical transmitter subsystem on a chip

Single-Crystal Lithium Niobate Films by Crystal Ion Slicing

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Zeroth-order half-wave plates of LiNbO3 for integrated optics applications at 1.55 μm

Cited by 26 publications

References 8 publications

Integration of Single‐Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Integration of Single‐Crystal LiNbO3 Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Hybrid integrated tunable optical transmitter subsystem on a chip

Single-Crystal Lithium Niobate Films by Crystal Ion Slicing

Contact Info

Product

Resources

About

Zeroth-order half-wave plates of LiNbO₃ for integrated optics applications at 1.55 μm

Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer

Integration of Single‐Crystal LiNbO₃ Thin Film on Silicon by Laser Irradiation and Ion Implantation– Induced Layer Transfer