Yield improvement of 0.13μm Cu/low-k dual-damascene interconnection by organic cleaning process

Abstract

Cu/low-k dielectrics are required to reduce resistance-capacitance (RC) delay and parasitic capacitance at the back-end-of-line (BEOL) interconnection. Integration of Cu/low-k dielectrics (black diamond) for BEOL interconnection in 0.13μm technology has gained wide acceptance in the microelectronics industry in recent years. In this article, the authors discuss the process-integration issues of 0.13μm Cu/low-k dual-damascene integration for static random access memory (SRAM) device yield. The same scheme of 0.13μm Cu/fluorinated silicate glass–based device was used for the full process of making a low-k based device. Black diamond was used as a low-k material with a dielectric constant of 2.95. To reduce the damage of low-k and improve the yield of a low-k based device, H2O ashing, organic cleaning, and reduced down pressure in chemical-mechanical planarization were selected for the study. Specifically, the cleaning process after the ashing process was very effective for the removal of organic residues from via, trench, and surface contaminants. There was an increase of 40.79% in SRAM device yield compared to the low-k based device without the organic cleaning chemical process. As a result, the authors successfully integrated a 0.13μm Cu/low-k dual-damascene interconnection with excellent yield performance after the improving process of organic cleaning.

Initial stages of ZrO2 chemical vapor deposition on Si(100)-(2×1) from zirconium tetra-tert-butoxide

“…the carbon species is located subsurface while the oxygen species is at the surface. The C:O ratio can however also be decreased due to desorption of carbonaceous species (most probably isobutene [32]). …”

Competitive Bonding of Amino and Hydroxyl Groups in Ethanolamine on Si(100)2×1: Temperature-Dependent X-Ray Photoemission and Thermal Desorption Studies of Nanochemistry of a Double-Chelating Agent

“…2 23-32 In particular, Wu et al, 23 Cao and Hamers, 24 26 27 Hlil et al, 25 and Kugler et al 28 found that different amino-containing molecules (including tert-butylamine, diethylamine, and methylethylamine, 23 dimethylamine, 27 1,4-phenylenediamine 28 and other alkylamines 26 ) bind to the 2 × 1 surface through N-H dissociative adsorption by using X-ray photoelectron spectroscopy (XPS). Similarly for the hydroxyl-containing molecules (including propanol, 2 methanol, 29 33 ethanol, 30 isopropanol and tertbutanol, 31 2,3-butanediol 32 ), Zhang et al, 2 Shannon and Campion, 29 Eng et al, 30 Kim et al, 31 32 and Casaletto et al 33 also observed O-H dissociative adsorption on the 2 × 1 surface by using vibrational and electron-based spectroscopic techniques. In addition, a Fourier Transform Infrared and XPS study on the adsorption of formamide (NH 2 CHO) on Si(100)2 × 1 reported by Bu and Lin 34 showed that NH 2 CHO adsorbs on the 2 × 1 surface through the carboxyl O with the NH 2 group intact.…”

Post-etch residue removal using choline chloride–malonic acid deep eutectic solvent (DES)

“…The efficiency of residue removal is affected not only by the material complexity but also by where the residue is formed. Currently, semi-aqueous fluoride (SAF) cleaning formulations that contain aprotic solvents, amines, fluorides, water and in some cases, corrosion inhibitors are cleaning agents of choice in the semiconductor industry [5][6][7][8]. However, the downside of these formulations is the use of solvents that are not very environmentally friendly [9].…”