Yellow emission (573.5 nm) Ga0.65In0.35P lasers grown on GaAs0.6P0.4 substrates by gas source molecular beam epitaxy

Utilizing the strain-induced lateral-layer ordering (SILO) process, we have grown GaxIn1−xP multiple quantum wires (MQWR) on ternary GaAs0.66P0.34 substrates using a modified strain-balance mechanism. The resulting [110] lateral modulation occurred with a periodicity of ∼300 Å. Two dimensions of quantum confinement were obtained by surrounding the laterally confined GaxIn1−xP regions by layers of higher-energy-gap Al0.15Ga0.53In0.32P in the growth direction. A redshift in the photoluminescence emission was observed as the growth temperature was increased attributed to a stronger lateral composition modulation at the higher growth temperatures. Based on the modified strain-balance mechanism, light-emitting diodes with the GaxIn1−xP MQWR active region were fabricated using the SILO process. Strongly TE-polarized room-temperature electroluminescence from these devices was observed at 6470 Å.

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Yellow emission (573.5 nm) Ga0.65In0.35P lasers grown on GaAs0.6P0.4 substrates by gas source molecular beam epitaxy

Cited by 3 publications

References 3 publications

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Visible wavelength (6470 Å) GaxIn1−xP/GaAs0.66P0.34 quantum wire heterostructures

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