Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

Cheng, C. C.; Tsai, Yi Ju; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei‐Chou; Hong, Ching-Wen; Liu, Wen‐Chau

doi:10.1016/j.snb.2005.02.019

Cited by 28 publications

(16 citation statements)

References 23 publications

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“…Therefore, there is a compromise between the power consumption and sensing performance. Table 1 shows the response comparison between the studied and previously reported devices [9,15]. The studied device exhibits the relatively large sensing response.…”

Section: Resultsmentioning

confidence: 96%

“…InAlAs-MHEMT (this work) 68 InGaP-HEMT [9] 35 AlGaAs-HEMT [15] 25 noting that the sub-threshold current (while V GS < V TH ) also increases with the increase of hydrogen concentration. This is also attributed to the adsorption of hydrogen gas.…”

Section: Structurementioning

confidence: 88%

“…Their intrinsic properties, including large and changeable energy-bandgap, high electron mobility make themselves good candidates for the fabrication of electronic devices in specialized fields [2], for example, high-frequency devices, gas sensors, and light-emitting diode (LED) [3][4][5]. Hydrogen sensors based on Schottky diodes, field-effect transistors, and high electron mobility transistors (HEMTs) were successfully fabricated and investigated [6][7][8][9]. Pd actively catalytic metal is widely used as the sensing materials of electronic device-based hydrogen sensors due to its high affinity to hydrogen [10].…”

Section: Introductionmentioning

confidence: 99%

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A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsai

Chen

Lin

et al. 2010

Microelectronics Reliability

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Section: Resultsmentioning

confidence: 96%

Section: Structurementioning

confidence: 88%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsai

Chen

Lin

et al. 2010

Microelectronics Reliability

Self Cite

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“…With this in mind, hydrogen gas sensors, such as those of the field effect transistor (FET) type and Schottky diode type, etc., have been reported for the detection of hydrogen leakage [1][2][3][4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air

Yamaguchi¹,

Takisawa²,

Kiwa³

et al. 2008

Sensors and Actuators B: Chemical

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Two different types of hydrogen response signals (DC and AC) of a proton pumping gate FET with triple layer gate structure (Pd / proton conducting polymer / Pt) were obtained. The proton pumping gate FET showed good selectivity against other gases (CH 4 , C 2 H 6 , NH 3 , and O 2 ). For practical use, the hydrogen response characteristics of the proton pumping gate FET were investigated in air (a gaseous mixture of oxygen and nitrogen). The proton pumping gate FET showed different hydrogen response characteristics in nitrogen as well as in air, despite the lack of oxygen interference independently. To clarify the response mechanism of the proton pumping gate FET, a hydrogen response measurement was performed, using a gas flow system and electrochemical impedance spectroscopy. Consequently, the difference in response between nitrogen and air was found to be due to the hydrogen dissociation reaction and the interference with the proton transfer caused by the adsorbed oxygen on the upper Pd gate electrode.

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“…However, MOS sensors suffer from drawbacks such as premature saturation of detectable hydrogen concentrations and low sensitivity. Other MOS-based devices have been used as hydrogen sensors, such as MOS field-effect transistors (FETs) 6,7 , high electron mobility transistors [8][9][10] , and Schottky diode-type FETs 11,12 . However, these devices require complicated fabrication processes and have high production costs.…”

mentioning

confidence: 99%

Realization of palladium-based optomechanical cantilever hydrogen sensor

McKeown

Wang

et al. 2017

Microsyst Nanoeng

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Hydrogen has attracted attention as an alternative fuel source and as an energy storage medium. However, the flammability of hydrogen at low concentrations makes it a safety concern. Thus, gas concentration measurements are a vital safety issue. Here we present the experimental realization of a palladium thin film cantilever optomechanical hydrogen gas sensor. We measured the instantaneous shape of the cantilever to nanometer-level accuracy using diffraction phase microscopy. Thus, we were able to quantify changes in the curvature of the cantilever as a function of hydrogen concentration and observed that the sensor's minimum detection limit was well below the 250 p.p.m. limit of our test equipment. Using the change in curvature versus the hydrogen curve for calibration, we accurately determined the hydrogen concentrations for a random sequence of exposures. In addition, we calculated the change in film stress as a function of hydrogen concentration and observed a greater sensitivity at lower concentrations.Keywords: hydrogen detection; imaging and sensing; interference microscopy; optomechanics; optical sensors; surface dynamics INTRODUCTIONHydrogen has always been viewed as a promising alternative to fossil fuels, and it can also function as an effective energy storage medium for intermittent energy sources. In addition, hydrogen is used in a range of other industries, including chemical production, metal refining, and food processing. A major safety concern with hydrogen is combustibility. Therefore, early leak detection and concentration determination of hydrogen have been areas of intense research 1-3 . There are various types of hydrogen sensors that use a wide range of detection mechanisms. Lundström et al. 4 proposed metal oxide semiconductor (MOS)-type hydrogen sensors 5 . However, MOS sensors suffer from drawbacks such as premature saturation of detectable hydrogen concentrations and low sensitivity. Other MOS-based devices have been used as hydrogen sensors, such as MOS field-effect transistors (FETs) 6,7 , high electron mobility transistors [8][9][10] , and Schottky diode-type FETs 11,12 . However, these devices require complicated fabrication processes and have high production costs. Optical gas sensors 13-21 not only overcome these disadvantages but also have other unique advantages, such as negligible electrical interference, no risk of ignition from an electrical spark, and the ability to work at high temperatures or in harsh environments.Palladium (Pd) can absorb up to 900 times its own weight in hydrogen gas at room temperature 22 . Compared with platinum 23 , Pd film is more popular because of its lower cost. Pd alloys with Ag, Au, Ni, and WO 3 have also been studied 24-29 because of their improved response time 24,25,27 , sensitivity 28,29 , and durability 26 as a sensing material. The alloys can avoid blistering effects 26 and the α to β phase transition at higher hydrogen concentrations 25,27 .

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Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

Cited by 28 publications

References 23 publications

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Analysis of response mechanism of a proton-pumping gate FET hydrogen gas sensor in air

Realization of palladium-based optomechanical cantilever hydrogen sensor

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