Microelectronics Reliability
 2010
DOI: 10.1016/j.microrel.2010.01.009
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A hydrogen sensor based on a metamorphic high electron mobility transistor (MHEMT)

Tsung Han Tsai
1
,
Huey Ing Chen
2
,
Kun-Wei Lin
3
et al.
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Cited by 3 publications
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On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Hsu
1
,
Chen
2
,
Chang
3
et al. 2012
Sensors and Actuators B: Chemical
22
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On the hydrogen sensing characteristics of a Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Hsu
1
,
Chen
2
,
Chang
3
et al. 2012
Sensors and Actuators B: Chemical
22
0
10
0
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Comprehensive study of hydrogen sensing phenomena of an electroless plating (EP)-based Pd/AlGaN/GaN heterostructure field-effect transistor (HFET)

Huang
1
,
Chen
2
,
Liu
3
et al. 2014
Sensors and Actuators B: Chemical
12
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2
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High-selectivity NOx sensors based on an Au/InGaP Schottky diode functionalized with self-assembled monolayer of alkanedithiols

Hsiao
1
,
Wu
2
,
Chen
3
2020
Sensors and Actuators B: Chemical
21
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7
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