X-ray reciprocal space mapping of a (112) oriented HgTe/Hg0.1Cd0.9Te superlattice

Li, M.; Becker, Christine; Gall, René Le; Faschinger, W.; Landwehr, G.

doi:10.1063/1.119410

Cited by 13 publications

(11 citation statements)

References 14 publications

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“…4 The shear strain in the [111] azimuth makes interpretation of the in-plane strain more difficult. Li et al 13 describe a technique of rotating the (333) and (511) RLPs about the (422) α RLP to effectively negate the shear strain, which has been applied in this work.…”

Section: Resultsmentioning

confidence: 97%

“…The relationship between bi-axial in-plane strain and out-of-plane strain (ε || and ε ⊥ , respectively) has been calculated for (211)-oriented HgCdTe layers by Li et al 13 as (2) where G ϭ 2C 44 -C 11 ϩ C 12 and the elastic constants C xx for a cubic system have been calculated using Vegard's law and published values for HgTe and CdTe. 14 The relaxed lattice constant a for HgCdTe has been calculated using a ϭ 6.4815x ϩ 6.46152…”

Section: Resultsmentioning

confidence: 99%

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High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Sewell

Musca

Dell

et al. 2005

Journal of Elec Materi

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Lattice mismatch between substrates and epitaxial layers of different molefractions can create a variety of distortions and defects in Hg (1-x) Cd (x) Te epilayers, thus degrading the performance of infrared detectors fabricated from this material. X-ray diffraction is a sensitive nondestructive technique, which allows in-depth characterization of the crystal lattice prior to detector fabrication. We present results of triple-axis diffractometry performed on single-and double-layer HgCdTe films grown on (211)B CdZnTe substrates by molecular beam epitaxy (MBE). In this study, both the ω and 2θ diffraction angles have been recorded absolutely so that the diffraction peaks in the RSMs can be positioned directly in reciprocal space, without requiring reference to a substrate peak. The positions of both surface-symmetric and asymmetric diffraction peaks have been used to extract lattice spacings parallel and perpendicular to the (211) growth direction. The relaxed lattice parameter of each epilayer has been calculated assuming that the layers are elastically strained. The low symmetry of the (211) growth direction, coupled with the anisotropic elasticity of zinc-blende semiconductors, results in monoclinic distortion of the lattice, as observed in these samples. In double-layer samples, the mosaicity of both layers is greater than that observed in single epilayers. Layers subjected to a Hg-saturated anneal show greater lattice distortion than as-grown samples.

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Section: Resultsmentioning

confidence: 97%

Section: Resultsmentioning

confidence: 99%

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Sewell

Musca

Dell

et al. 2005

Journal of Elec Materi

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“…14 By first taking into account any tilt between the substrate and layer, the shear angle can be readily extracted from the RSMs. 11 The peaks in a RSM are two-dimensional in nature, and the spread can be quantified by two orthogonal FWHM. The RSMs are set of v-2u scans before they are transformed into reciprocal space, and the spread in 2u may be described by a width FWHM 2u , and the spread in v as FWHM v .…”

Section: Discussionmentioning

confidence: 99%

“…The latter spacing is used to characterize the strain state of the grown layers, which has previously been performed on (112) HgCdTe single layers, 9 heterostructures, 10 and superlattices. 11 Reported here is the study of a number of molecular beam epitaxy (MBE) grown (001) and (112) HgTe-HgCdTe superlattices using this technique. The uniformity of two of these samples has been also been investigation by plotting the two FWHM values associated with the variation in lattice spacing and lattice tilts as a function of x-ray spot position on the surface of the wafer.…”

Section: Introductionmentioning

confidence: 99%

Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction

Hatch

Sewell

Dell

et al. 2006

Journal of Elec Materi

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In this study, high-resolution diffraction has been used to investigate the strain state and uniformity of (001) and (112) oriented HgTe-CdTe superlattices grown by molecular beam epitaxy. A number of reciprocal space maps were taken over the surface of the grown wafer, and variations in the spread of lattice spacings and tilts were quantified and used to identify the presence of local defects. Though all growths were fully strained, those with a larger mismatch exhibited a greater spread of lattice tilts from the substrate to the superlattice layers in both orientations. Further, the variation in composition of the CdZnTe substrates resulted in a variation of strain over the surface of the superlattice, and evidence of areas of significant dislocation densities present in substrate layer corresponded with defect-rich areas in the superlattice layer.

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“…This issue has received increasing attention, recently. [2][3][4][5] For MBE grown HgCdTe layers on CdZnTe substrates, there is another issue that has attracted less attention. MBE-grown HgCdTe layers are typically grown on (211)B surfaces.…”

Section: Shear Deformation and Strainmentioning

confidence: 99%

Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

Lam

Moore

Forrest

et al. 2000

Journal of Elec Materi

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X-ray reciprocal space mapping of a (112) oriented HgTe/Hg0.1Cd0.9Te superlattice

Abstract: Study of damage induced by room-temperature Al ion implantation in Hg 0.8 Cd 0.2 Te by x-ray diffuse scatteringHigh resolution x-ray diffraction studies of short-period CdTe/MnTe superlattices

Cited by 13 publications

References 14 publications

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Investigation of HgTe-HgCdTe superlattices by high-resolution X-ray diffraction

Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

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