Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

Lam, Terrance Thiem; Moore, Carolyn E.; Forrest, R. L.; Goorsky, Mark S.; Johnson, S. M.; Leonard, D.; Strand, T. A.; DeLyon, T. J.; Gorwitz, M. D.

doi:10.1007/s11664-000-0228-8

Cited by 12 publications

(10 citation statements)

References 10 publications

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“…The (422) x-ray diffraction scattering measurement 22 for the hydrogen-implanted CdZnTe (CZT) sample at 253 K is presented in Fig. 1a together with the data following the anneal steps at temperatures up to 500°C.…”

Section: Resultsmentioning

confidence: 99%

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Miclaus

Malouf

Johnson

et al. 2005

Journal of Elec Materi

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As part of a series of wafer bonding experiments, the exfoliation/blistering of ion-implanted Cd 0.96 Zn 0.04 Te substrates was investigated as a function of postimplantation annealing conditions. (211) Cd 0.96 Zn 0.04 Te samples were implanted either with hydrogen (5 ϫ 10 16 cm Ϫ2 ; 40-200 keV) or co-implanted with boron (1 ϫ 10 15 cm Ϫ2 ; 147 keV) and hydrogen (1-5 ϫ 10 16 cm Ϫ2 ; 40 keV) at intended implant temperatures of 253 K or 77 K. Silicon reference samples were simultaneously co-implanted. The change in the implant profile after annealing at low temperatures (Ͻ300°C) was monitored using high-resolution x-ray diffraction, atomic force microscopy (AFM), and optical microscopy. The samples implanted at the higher temperature did not show any evidence of blistering after annealing, although there was evidence of sample heating above 253 K during the implant. The samples implanted at 77 K blistered at temperatures ranging from 150°C to 300°C, depending on the hydrogen implant dose and the presence of the boron co-implant. The production of blisters under different implant and annealing conditions is consistent with nucleation of subsurface defects at lower temperature, followed by blistering/exfoliation at higher temperature. The surface roughness remained comparable to that of the as-implanted sample after the lower temperature anneal sequence, so this defect nucleation step is consistent with a wafer bond annealing step prior to exfoliation. Higher temperature anneals lead to exfoliation of all samples implanted at 77 K, although the blistering temperature (150-300°C) was a strong function of the implant conditions. The exfoliated layer thickness was 330 nm, in good agreement with the projected range. The "optimum" conditions based on our experimental data showed that implanting CdZnTe with H ϩ at 77 K and a dose of 5 ϫ 10 16 /cm 2 is compatible with developing high interfacial energy at the bonded interface during a low-temperature (150°C) anneal followed by layer exfoliation at higher (300°C) temperature.

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Section: Resultsmentioning

confidence: 99%

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Miclaus

Malouf

Johnson

et al. 2005

Journal of Elec Materi

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“…A.-L. LEBAUDY , 1,2,3,4 R. PESCI, 1 The electronic assembly considered in this study is an infrared (IR) detector consisting of different layers, including (111) CdHgTe and (100) silicon single crystals. The processing steps and the low working temperature (77 K) induce thermomechanical stresses that can affect the reliability of the thin and brittle CdHgTe detection circuit and lead to failure.…”

Section: X-ray Diffraction Residual Stress Measurement At Roommentioning

confidence: 99%

“…A few authors have made some experimental measurements to quantify the strain induced in epitaxy-grown CdHgTe, but none on complete multilayer assemblies. 2,3 Finite element modellings have been rather widely used in order to predict the appearance of stresses under thermal loadings. 4,5 However, the material properties are not well known, especially at low temperature (elastic constants, thermal expansion coefficient), and the complexity of electronic assemblies imposes many assumptions in order to obtain acceptable computing times.…”

Section: Introductionmentioning

confidence: 99%

X-ray Diffraction Residual Stress Measurement at Room Temperature and 77 K in a Microelectronic Multi-layered Single-Crystal Structure Used for Infrared Detection

Lebaudy

Pesci

Fendler³

2018

Journal of Elec Materi

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“…Lam et al 7 have published RSMs of single HgCdTe layers grown by MBE on CdZnTe substrates, and have observed a linear relationship between lattice mismatch and shear strain, as predicted by De Caro and Tapfer. 8 In new work presented here, we construct RSMs to quantify distortions to the crystal lattice in double-layer HgCdTe heterostructures grown by MBE on CdZnTe (211)B-oriented substrates, and compare the results of as-grown wafers with those of wafers that have been annealed for 24 h at 250°C in a Hg-saturated atmosphere.…”

Section: Introductionmentioning

confidence: 58%

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

Sewell

Musca

Dell

et al. 2005

Journal of Elec Materi

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Lattice mismatch between substrates and epitaxial layers of different molefractions can create a variety of distortions and defects in Hg (1-x) Cd (x) Te epilayers, thus degrading the performance of infrared detectors fabricated from this material. X-ray diffraction is a sensitive nondestructive technique, which allows in-depth characterization of the crystal lattice prior to detector fabrication. We present results of triple-axis diffractometry performed on single-and double-layer HgCdTe films grown on (211)B CdZnTe substrates by molecular beam epitaxy (MBE). In this study, both the ω and 2θ diffraction angles have been recorded absolutely so that the diffraction peaks in the RSMs can be positioned directly in reciprocal space, without requiring reference to a substrate peak. The positions of both surface-symmetric and asymmetric diffraction peaks have been used to extract lattice spacings parallel and perpendicular to the (211) growth direction. The relaxed lattice parameter of each epilayer has been calculated assuming that the layers are elastically strained. The low symmetry of the (211) growth direction, coupled with the anisotropic elasticity of zinc-blende semiconductors, results in monoclinic distortion of the lattice, as observed in these samples. In double-layer samples, the mosaicity of both layers is greater than that observed in single epilayers. Layers subjected to a Hg-saturated anneal show greater lattice distortion than as-grown samples.

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Shear deformation and strain relaxation in HgCdTe on (211) CdZnTe

Cited by 12 publications

References 10 publications

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

Exfoliation and blistering of Cd0.96Zn0.04Te substrates by ion implantation

X-ray Diffraction Residual Stress Measurement at Room Temperature and 77 K in a Microelectronic Multi-layered Single-Crystal Structure Used for Infrared Detection

High-resolution X-ray diffraction studies of molecular beam epitaxy-grown HgCdTe heterostructures and CdZnTe substrates

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