X-ray Photoemission Spectroscopy Study of GaAs(111)B Substrate Nitridation using an RF-Radical Source

Abstract

The mechanism of GaAs(111)B surface nitridation using an RF-radical source was studied while systematically changing the nitridation temperature. Atomic force microscopy and X-ray photoemission spectroscopy measurements indicated that the nitridation of the GaAs(111)B surface showed a similar dependence on nitridation temperature to that of a GaAs(001) surface. Both the degree of nitridation and the Ga adatom density increased with increasing nitridation temperature, and above 510 °C, Ga droplets were formed. Strong photoluminescence signals were obtained from the GaAs(111)B surfaces.

Epitaxial Lateral Overgrowth of GaAsP for III‐V/Si‐Based Photovoltaics

“…[13] Epitaxial lateral overgrowth (ELOG) is another approach that has been widely used for heteroepitaxial III-V/Si integration. [14][15][16] However, despite seeing active research as material for a top-cell candidate in SiMJSC structures, with a record GaAsP/Si tandem cell efficiency of 25.0% being reported as recently as 2020, [17] ELOG of GaAsP has not yet been studied. While the current 25.0% efficiency record using a graded buffer layer to filter defects is impressive, the TD density in this cell is still quite high at %10 7 cm À3 , [17] indicating that improved defect density reduction is a promising strategy to further increase the efficiency.…”