X-Ray Irradiation on 4H-SiC MOS Capacitors Processed under Different Annealing Conditions

Abstract

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing (PDA) processes in N2O or POCl3 atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl3-annealed oxide respect to the N2O annealed is discussed.

Effects of gamma-ray irradiation on material and electrical properties of AlN gate dielectric on 4H-SiC

“…The commonly used gate material, SiO 2 , is inadequate for space MOS device application due to its low dielectric constant (∼3.9), high interface states (∼10 13 cm −2 •eV) [4], etc. Additionally, it has been found that commonly used annealing atmospheres for SiO 2 /SiC introduce additional defects under irradiation [5]. As an alternative, materials with larger permittivity, such as AlN, have been proposed to replace SiO 2 as the gate dielectric on 4H-SiC.…”

Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer

“…13) In early studies on 4H-SiC MOS devices, the passivation techniques with N 2 O-and POCl 3 -annealing led to a different radiation susceptibility from that of thermal SiO 2 . [15][16][17] However, the radiation response after the passivation with B and Ba has not yet been evaluated.…”