Radiation Effects of 5MeV Proton on Wet Oxidation SiO<sub>2</sub>/4H-SiC MOS Capacitor

Li, Haojie; Zhang, Yuming; Tang, Xiaoyan; Li, Dongxun; Song, Qi

doi:10.1109/wipdaasia.2018.8734694

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) 2018

DOI: 10.1109/wipdaasia.2018.8734694

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Radiation Effects of 5MeV Proton on Wet Oxidation SiO₂/4H-SiC MOS Capacitor

Haojie Li

Yuming Zhang

Xiaoyan Tang

et al.

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Cited by 2 publications

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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Zhang

Zhu

et al. 2023

Chinese Phys. B

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Lateral type n-channel 4H-SiC MOSFETs fabricated by current industrial process are irradiated with gamma-ray at different irradiation doses in this paper, to make a profound study on the generation mechanism of radiation-induced interface traps and oxide trapped charges. Electrical parameters (e.g. threshold voltage, subthreshold swing and channel mobility) of the device before and after irradiation are investigated, and the influence of the channel orientation ([1$\bar 1$00] and [11$\bar 2$0]) on the radiation effect is discussed for the first time. Positive threshold voltage shift is observed at very low irradiation doses (<100 krad(Si)), the threshold voltage then shifts negatively with dose increasing. It is found that the dependence of interface trap generation on radiation dose is not the same for doses below and above 100 krad. For irradiation doses <100 krad, the radiation-induced interface traps with relatively high generation speeds dominate the competition with radiation-induced oxide trapped charges, contributing to the positive threshold voltage shift correspondingly. All these results provide additional insight into the radiation-induced charge trapping mechanism in SiO2/SiC interface.

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Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Zhang

Zhu

et al. 2023

Chinese Phys. B

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Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions

Zeng,

Yang,

Wang

et al. 2024

IEEE Trans. Electron Devices

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Radiation Effects of 5MeV Proton on Wet Oxidation SiO₂/4H-SiC MOS Capacitor

Cited by 2 publications

References 17 publications

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions

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Radiation Effects of 5MeV Proton on Wet Oxidation SiO2/4H-SiC MOS Capacitor

Cited by 2 publications

References 17 publications

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Impact of low-dose radiation on nitrided lateral 4H-SiC MOSFETs and the related mechanisms

Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions

Contact Info

Product

Resources

About

Radiation Effects of 5MeV Proton on Wet Oxidation SiO₂/4H-SiC MOS Capacitor