Research Progress on Radiation Damage Mechanism of SiC MOSFETs Under Various Irradiation Conditions

Zeng, Qi; Yang, Zhichao; Wang, Xingfu; Li, Shuti; Gao, Fangliang

doi:10.1109/ted.2024.3359172

Cited by 3 publications

(1 citation statement)

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“…With the gradual advancement of silicon carbide (SiC) chemical vapor deposition (CVD) technology, the SiC growth process has approached maturity, and the primary obstacle to producing SiC semiconductor epitaxial wafers lie in the presence of epitaxial defects. These defects pose significant challenges for high-voltage and high-power SiC power electronic devices [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. The origins of these defects are often related to many factors, such as substrate quality, growth temperature and cavity structure, and the crystal structure of these defects is usually complicated [ 8 , 9 , 10 , 11 , 12 , 13 , 14 , 15 ].…”

Section: Introductionmentioning

confidence: 99%

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

Pei,

Yuan,

et al. 2024

Micromachines

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To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

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