Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers
Yicheng Pei,
Weilong Yuan,
Yunkai Li
et al.
Abstract:To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately con… Show more
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