1964
DOI: 10.1063/1.1713173
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X-Ray Diffraction Analyses and Etch Patterns of Faults in Epitaxial Silicon

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Cited by 8 publications
(1 citation statement)
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“…The use of Berg-Barrett skew reflections described by Lauriente et al (1964) permits a greater degree of latitude in that one is permitted a choice of a number of planes to diffract from using the same monochromatic radiation and (100) and (110) silicon in addition to (Ill) oriented silicon. Several corrections have been included as well as several reflections which were excluded in their paper_ The calculations were performed using the weighted Ko: wavelengths of Cu, Co, Fe and Cr and a silicon lattice constant of 5·430721.…”
Section: F Pink and R Berkstressermentioning
confidence: 99%
“…The use of Berg-Barrett skew reflections described by Lauriente et al (1964) permits a greater degree of latitude in that one is permitted a choice of a number of planes to diffract from using the same monochromatic radiation and (100) and (110) silicon in addition to (Ill) oriented silicon. Several corrections have been included as well as several reflections which were excluded in their paper_ The calculations were performed using the weighted Ko: wavelengths of Cu, Co, Fe and Cr and a silicon lattice constant of 5·430721.…”
Section: F Pink and R Berkstressermentioning
confidence: 99%