X-ray characterization of stresses and defects in thin films and substrates

Rozgonyi, G. A.; Miller, Donald F.

doi:10.1016/0040-6090(76)90360-6

Cited by 48 publications

(11 citation statements)

References 40 publications

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“…Imaging of each wafer was performed by exposures using type

reflections, namely

and

. In order to make a correction of curvature of the Am-GaN wafers, an automated Bragg angle control was used to keep the crystals in a scattering condition during the scans [ 34 ]. The X-ray topographs were recorded by a high-resolution CCD camera (5.4 μm × 5.4 μm pixel size).…”

Section: Methodsmentioning

confidence: 99%

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

et al. 2021

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X-ray topography defect analysis of entire 1.8-inch GaN substrates, using the Borrmann effect, is presented in this paper. The GaN wafers were grown by the ammonothermal method. Borrmann effect topography of anomalous transmission could be applied due to the low defect density of the substrates. It was possible to trace the process and growth history of the GaN crystals in detail from their defect pattern imaged. Microscopic defects such as threading dislocations, but also macroscopic defects, for example dislocation clusters due to preparation insufficiency, traces of facet formation, growth bands, dislocation walls and dislocation bundles, were detected. Influences of seed crystal preparation and process parameters of crystal growth on the formation of the defects are discussed.

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“…Imaging of each wafer was performed by exposures using type

reflections, namely

and

Section: Methodsmentioning

confidence: 99%

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

et al. 2021

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“…Crystallographic orientations were chosen to specify the reflecting planes completely. The table thus differs from earlier surface reflection compilations (Rozgonyi & Miller, 1976;Halliwell, Childs & O'Hara, 1973) in that the rotation axis is specified, which then defines the indices of the reflecting planes, and further the transmission cases are included.…”

Section: Cradl E A~mentioning

confidence: 99%

“…This is necessary, for example, in studies of the depth behavior of epitaxial (Rozgonyi & Miller, 1976) or implanted layers or for studies of dislocation patterns (Halliwell, Childs & O'Hara, 1973). When the topographs desired are for surface reflection geometry, the alignment of the crystal is usually simple, as the reflected X-ray photon flux is relatively large.…”

mentioning

confidence: 99%

“…In the study of semiconductor materials by X-ray topography, one often desires topographs of a specimen using different reflecting planes and a particular monochromatic radiation. This is necessary, for example, in studies of the depth behavior of epitaxial (Rozgonyi & Miller, 1976) or implanted layers or for studies of dislocation patterns (Halliwell, Childs & O'Hara, 1973). When the topographs desired are for surface reflection geometry, the alignment of the crystal is usually simple, as the reflected X-ray photon flux is relatively large.…”

mentioning

confidence: 99%

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In situalignment procedure for X-ray topography

Forman¹,

Mayo²

1985

J Appl Cryst

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A simple method for in situ alignment of samples in a double-crystal X-ray topography system is described. This method permits a specific crystallographic axis to be made coincident with the sample rotation axis used to set the Bragg angle. Surface reflections from approximately orthogonal crystallographic planes are required and tables of such planes suitable for alignment of cubic crystals are given. This procedure allows rapid setup for the other accessible surface reflection or transmission topographs.

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“…Apart of various x-ray 8,9 and electron diffraction techniques, 10 a powerful method for the nondestructive characterization of strain states in thin layer systems is Rutherford backscattering spectroscopy in the ion channeling mode ͑RBS/C͒. 11,12 The applicability of this method is based on the well known fact that strains in crystals are generally associated with changes in the angles between different crystal directions-except for purely hydrostatic strains.…”

Section: Introductionmentioning

confidence: 99%

Strain tensors in layer systems by precision ion channeling measurements

Trinkaus

Buca

Holländer

et al. 2010

Journal of Applied Physics

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Effects of elastic stress introduced by a silicon nitride cap on solid-phase crystallization of amorphous siliconA powerful method for analyzing general strain states in layer systems is the measurement of changes in the ion channeling directions. We present a systematic derivation and compilation of the required relations between the strain induced angle changes and the components of the strain tensor for general crystalline layer systems of reduced symmetry compared to the basic ͑cubic͒ crystal. It is shown that, for the evaluation of channeling measurements, virtually all layers of interest may be described as being "pseudo-orthorhombic." The commonly assumed boundary conditions and the effects of surface misorientations on them are discussed. Asymmetric strain relaxation in layers of reduced symmetry is attributed to a restriction in the slip system of the dislocations inducing it. The results are applied to ͕110͖SiGe/Si layer systems.

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X-ray characterization of stresses and defects in thin films and substrates

Cited by 48 publications

References 40 publications

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

Structural Analysis of Low Defect Ammonothermally Grown GaN Wafers by Borrmann Effect X-ray Topography

In situalignment procedure for X-ray topography

Strain tensors in layer systems by precision ion channeling measurements

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