X-ray absorption fine structure of ion-implanted semiconductors

Abstract

The local environments around mercury atoms in the narrow-bandgap Hg 0.79 Cd 0.21 Te semiconductor alloys have been deduced from extended x-ray absorption fine-structure (EXAFS) analysis. A nonlinear least-squares fitting was applied in order to determine the coordination number, the bond distances and the Debye-Waller factors for the nearest and the next-nearest neighbours around the Hg atom. While ordering has been found for the first coordination shell which consists of four tetrahedrally coordinated Te atoms at 0.280 nm, the next-neighbour shell (consisting of 12 cations) is split into two peaks at the bond lengths of 0.454 nm for Hg-Cd and 0.459 nm for Hg-Hg. Local structure parameters for Krand Xe-ion-implanted Hg 0.79 Cd 0.21 Te crystals are also analysed.

Contribution of core-loss fine structures to the characterization of ion irradiation damages in the nanolaminated ceramic Ti3AlC2

“…The relevance of Extended X-Ray Absorption Fine Structures (EXAFS) in the monitoring of structural modifications induced by ion beams has already been demonstrated [22,23,24,25,26,27]. Near edge fine structures were also used in order, for instance, to analyze charge transfers and coordination changings of boron and silicon atoms in borosilicate glasses under electron irradiation [28], to investigate hybridization and charge transfer modifications between Ni and Al in irradiated Ni-Al nanocrystalline films [29], boron stability and coordination in borophosphate glasses [30], or to determine titanium coordination environment in amorphized zirconolite ceramics [31].…”

Modeling of the Structural Properties of Hg1–x Cd x Te

“…Hg 1-x Cd x Te is a pseudobinary semirandom ternary alloy. [26][27][28] Local cation concentration variations as well as tellurium inclusions are typically observed in epitaxial layers. In this work, two models will be used to approximate experimentally observed Hg 1-x Cd x Te: virtual crystal 29 and ordered alloy approximations.…”

Dependency of p-n junction depth on ion species implanted in HgCdTe

“…[1][2][3][4][5][6][7][8][9][10][11][12][13] When implants get into the epilayers, they expel Hg atoms and generate Hg interstitials (Hg I ). The properties and mechanisms of the p-n junctions induced by the implantation have been studied for over a decade.…”