X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Sarazin, N.; Jardel, Olivier; Morvan, E.; Aubry, R.; Laurent, Matthew A.; Magis, M.; Tordjman, M.; Alloui, M.; Drisse, O.; Persio, J. Di; Poisson, M. A.; Delage, S.; Vellas, N.; Gaquière, C.; Théron, D.

doi:10.1049/el:20072598

Cited by 16 publications

(11 citation statements)

References 5 publications

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“…Measurements showed a power density of 10.3 W/mm with a 51 % power added efficiency (PAE) and a 15 dB associated power gain. Compared to the published results [7,8] this represents one of the best power performance obtained for AlInN based HEMTs. Table 1.…”

Section: Devices Resultsmentioning

confidence: 58%

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Poisson

Sarazin

Magis

et al. 2010

Phys. Status Solidi (c)

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In this paper we report on low‐pressure metalorganic vapour deposition of InAlN/GaN heterostructures grown on different substrates (Sapphire, bulk SiC, composite SiCopSiC) for HEMT applications, and on first device performances obtained with these heterostructures. Optimisation of the crystal growth on each kind of substrate has led to InAlN/GaN HEMT heterostructures grown on bulk SiC and on composite SiCopSiC substrates which are successfully compared, in terms of material quality, to the standard GaAlN/GaN HEMT heterostructures grown on bulk SiC substrates. First devices based on InAlN/GaN heterostructures grown on bulk SiC exhibit very good microwave performances, with output power of 10.3 W/mm at 10 GHz, similar to those obtained with GaAlN/GaN heterostructures, confirming the promising potential of InAlN material. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Devices Resultsmentioning

confidence: 58%

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Poisson

Sarazin

Magis

et al. 2010

Phys. Status Solidi (c)

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“…5 Similar heterostructures grown on SiC substrates exhibit an output power of up to 6.8 W/mm at 10 GHz. 6 This demonstrates the strong potential of this system, whereas only scarce information is available on the amount of piezoelectric and pyroelectric charges as a function of the In composition, the influence of the AlInN barrier thickness, and more generally, on the values of lattice constants, their bowing parameters, and the strain state of the underlying GaN buffer layer.…”

Section: Introductionmentioning

confidence: 98%

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Gonschorek

Carlin

Feltin

et al. 2008

Journal of Applied Physics

166

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Compared to the AlGaN alloy, which can only be grown under tensile strain on GaN, the AlInN alloy is predicted by Vegard's law to be lattice-matched ͑LM͒ on fully relaxed GaN templates for an indium content of ϳ17.5%, i.e., it can be grown either tensely or compressively on GaN. The effect of strain on the polarization induced sheet charge density at the Al 1−x In x N / AlN/ GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick AlN interlayer. The barrier indium content ranges at 0.03Յ x Յ 0.23 for 6 nm thick barriers and 0.07Յ x Յ 0.21 for 14 nm thick barriers. It is found that the two-dimensional electron gas ͑2DEG͒ density varies between ͑3.5Ϯ 0.1͒ ϫ 10 13 cm −2 and ͑2.2Ϯ 0.1͒ ϫ 10 13 cm −2 for 14 nm thick barriers. Finally, a 2DEG density up to ͑1.7Ϯ 0.1͒ ϫ 10 13 cm −2 is obtained for a nearly LM AlInN barrier with ϳ14.5% indium on GaN as thin as 6 nm.

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“…Recently AlInN/GaN material system has obtained much recognition as an optimum material for nitride-based high electron mobility transistors (HEMTs) due to its promising electronic properties such as large spontaneous polarisation effects and the wide energy bandgap in AlInN. Lattice-matched AlInN/GaN HEMT exhibits high spontaneous polarisation induced two-dimensional electron gas (2DEG) density at the heterointerface and also avoids the problem of interface and bulk defects due to strain relaxation [1][2][3]. However, the major factor that limits the performance and reliability of these HEMT devices [4][5][6] for high-power radio frequency (RF) applications is the excessive gate leakage due to higher electric field across the thin AlInN barrier.…”

Section: Introductionmentioning

confidence: 99%

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

Jena

Swain

Lenka

2016

IET Circuits, Devices & Systems

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In this paper, the authors present a polarisation dependent analytical model for DC, radio frequency (RF) and linearity characteristics of a proposed lattice-matched AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT). The developed model includes charge controlled analysis derived from triangular potential well approximation along with the spontaneous and piezoelectric polarisation effects. The model accurately predicts the threshold voltage, two-dimensional electron gas sheet charge density, drain current, transconductance and cutoff frequencies for different samples of gate dielectric materials such as SiO 2 ,H f O 2 and Al 2 O 3 over a full range of gate and drain bias. A detailed analysis of the linearity characteristics by investigating the key figure-of-merit metrics such as second-order voltage intercept point, third-order voltage intercept point, third-order input intercept point and third-order intermodulation distortion are performed for different gate dielectric thicknesses of 5, 7 and 10 nm. The accuracy of the model results is verified against Silvaco Technology Computer Aided Design numerical simulation results and found to be satisfactory. It is observed that by careful tuning the device parameters such as dielectric constant and dielectric thickness, lattice-matched AlInN/AlN/GaN MOSHEMT can considerably improve the device performance and suitable for high performance low distortion RF applications.

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X-band power characterisation of AlInN/AlN/GaN HEMT grown on SiC substrate

Cited by 16 publications

References 5 publications

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Two-dimensional electron gas density in Al1−xInxN/AlN/GaN heterostructures (0.03≤x≤0.23)

Effect of thin gate dielectrics on DC, radio frequency and linearity characteristics of lattice‐matched AlInN/AlN/GaN metal–oxide–semiconductor high electron mobility transistor

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