X band BiCMOS SiGe 0.35 μm voltage controlled oscillator in parallel and reflection topology and external phase noise improvement solution

Temperature dependence of the power gain and scattering parametersS11 andS22 of an RF nMOSFET with advanced RF-CMOS technology

“…Recently, RF silicon Bipolar, CMOS, and BiCMOS processes have become increasingly popular for the C-band or even higherfrequency band radio-frequency integrated circuits (RF-ICs) [1][2][3][4]. One of the main reasons is the availability of the transistors with high current-gain cutoff frequency f T and maximum oscillation frequency f MAX due to the rapid progress of silicon-process technologies [5,6].…”

“…In the following, we apply the image theory to a vertical electric dipole (VED) in an isotropic medium above a half-space of another isotropic medium whose permittivity and permeability may have negative values. Such a medium was introduced by Victor Veselago in 1967 and has been variably called a left-handed medium [4,5], medium with negative refraction index [5,6], double-negative medium [7], or backward-wave medium [8]. The medium will here be called the Veselago medium for simplicity.…”

“…In the present investigation, although the starting point is the same as those in [3,4] (Volterra expansion of the output power of nonlinear device), the present tradeoffs among parameters are based on the SNR degradation budget of radio systems with quadrature-amplitude modulation schemes and Reed-Solomon coding. It is also noted that for multicarrier telecommunication systems, the impact of CTB on BER degradation have been experimentally investigated [5], while the present study provides a rigorous analysis of CTB, and its contribution to the end-to-end system BER performance degradation and receiver dynamic range, and role in parameter tradeoffs.…”

Analysis of RF scattering parameters and noise and power performances of RF‐power MOS in 0.15‐μm RF cmos technology for RF SOC applications

“…Recently, RF silicon Bipolar, CMOS, and BiCMOS processes have become increasingly popular for C-band or even higherfrequency band radio-frequency integrated circuits (RF-ICs) [1][2][3][4]. One of the main reasons for this is the availability of RF-power MOSFETs/HBTs with high current-gain cutoff frequency f T , maximum oscillation frequency f MAX , power-addedefficiency (PAE), power gain G p , and output power P out , due to the rapid progress of silicon-process technologies [5][6][7].…”

High‐quality‐factor (33) and high‐resonant‐frequency (35 GHz) spiral inductors fabricated in 0.25‐μM mixed‐signal/RF‐CMOS technology

“…Recently, RF-silicon bipolar, CMOS, and BiCMOS processes have become increasingly more popular for radio-frequency integrated circuits (RF-ICs) operating at the 5-GHz band or even at higher frequency bands [1][2][3][4]. The main reasons for this are the transistors' high performance, the low cost, and the high degree of integration with baseband circuits [5].…”