Write-Once-Read-Many-Times Characteristic of InZnO Oxide Semiconductor

Hsu, Chih-Chieh; Tsao, Che-Chang; Lin, Yu-Sheng

doi:10.1109/ted.2018.2798710

Cited by 17 publications

(11 citation statements)

References 34 publications

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“…The plentiful Al cations induce an abrupt increase, and the rupture of the established conductive filaments by negative voltage is difficult to fully carry out (Figure c). Thus, the resistive switching is irreversible and the LRS can maintain stable even with a high negative voltage, exhibiting a superior WORM performance. − For Al/ZnO NPs/CuO NWs/Cu based memristors, the abundant oxygen defects in ZnO NPs (XPS result as shown in Figure g) adsorbed on the surface of CuO NWs serve as holes or electron traps and provide acceptors for carriers. In this case, the trapping/detrapping effect under the electric field dominates the resistive switching behaviors instead of the Al conductive filament due to the low migration barrier of the electrons.…”

Section: Resultsmentioning

confidence: 99%

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Wang

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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As an emerging electronic device, a memristor facilitates the realization of neuromorphic computing systems. However, high-performance neuromorphic computing systems require not only robust analog memristors but also digital memristors with complementary functions. Here, a digital–analog integrated memristor based on Al/ZnO NPs/CuO NWs/Cu is proposed and demonstrated. First, the electrical properties of the CuO NWs based device are investigated, which exhibit a write-once-read-many-times (WORM) performance. Then, typical bipolar resistive switching behaviors are realized by spin-coating the ZnO NPs to form an Al/ZnO NPs/CuO NWs/Cu based memristor. Through tuning of the applied voltage, an abrupt-to-gradient transition of conductance is achieved in situ. Several analog behaviors, such as long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD) are effectively emulated by applying a series of specified electrical measurements to the memristor, which proves the achievement of a digital–analog integrated memristor. Furthermore, on the basis of the LTD and LTP behaviors of the memristor, neural network simulations for handwritten recognition are implemented. The results reveal high recognition accuracies of up to 93%, which are close to the performances for ideal memristors.

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Section: Resultsmentioning

confidence: 99%

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

Wang

Zhang

et al. 2022

ACS Appl. Electron. Mater.

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“…The effect of sputtering pressure was demonstrated recently by Simanjuntak et al [205]. The work reveals that devices developed with a low sputtering pressure show write-once-read-many-times (WORM, nonerasable) memory behaviours [206], [207]. In conclusion, those devices developed with a high sputtering pressure typically show reproducible switching behaviors (rewriteable, erasable) [202], [208].…”

Section: Effect Of Deposition Parametersmentioning

confidence: 65%

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

et al. 2021

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Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges.

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“…Today's WORM memory technology is based on the electrically or laser programmed fuse WORM type. However, in current WORM research, the emphasis was shifted to organic materials or solution process techniques in order to achieve rapid switching rate, lower power consumption,, large storage density, simplicity, and being cost-effective, which has been dubbed WORM RS [28,29]. Unlike ReRAM, the intrinsic features of WORM RS were sufficient to oppose the applied electric field, resulting in an irreversible shift.…”

Section: Write-once-read-many (Worm)mentioning

confidence: 99%

Perovskites in Next Generation Memory Devices

How¹,

Sarjidan²,

Goh³

et al. 2022

Recent Advances in Multifunctional Perovskite Materials

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Although perovskites are widely employed in other industries such as photovoltaics and light-emitting diodes (LEDs), digital technology is rapidly gaining pace in today’s market and shows no signs of abating. As a result, the progress of system memory and memory storage has accelerated into new inventions. The invention of dynamic Random-Access Memory (RAM) in the 1960s laid the groundwork for today’s multibillion-dollar memory technology sector. Resistive switching (RS) capabilities of perovskite-based materials such as perovskite oxides and metal halides have been extensively studied. Chemical stability, high endurance, quick writing speed, and strong electronic interaction correlation are some of the benefits of employing perovskites in RS devices. This chapter will investigate the progress of system memory and memory storage employing perovskites, the advantageous properties of perovskites utilized in memory devices, the various types of RS employing perovskites, as well as the research challenges that perovskite-based memory systems face in future commercial development.

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Write-Once-Read-Many-Times Characteristic of InZnO Oxide Semiconductor

Cited by 17 publications

References 34 publications

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

A Digital–Analog Integrated Memristor Based on a ZnO NPs/CuO NWs Heterostructure for Neuromorphic Computing

ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

Perovskites in Next Generation Memory Devices

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