Write Margin Analysis of Spin–Orbit Torque Switching Using Field-Assisted Method

Tsou, Ya-Jui; Chiu, Jih-Chao; Shih, Hsin-Nung; C, Liu

doi:10.1109/jxcdc.2019.2951837

Cited by 5 publications

(3 citation statements)

References 43 publications

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“…Therefore, these must be considered during device operations. The temperature-dependent saturation magnetization (M s (T)) and PMA constant (K i (T)) can be given as [99][100][101] M s (T)…”

Section: A Phenomenological Descriptionmentioning

confidence: 99%

“…Leveraging this advantage, Garello et al used magnetic Co metal as an MHM in 2019, 145 demonstrating a fieldfree SOT switching. Later, Tsou et al 99 performed a write margin analysis for this structure through numerical simulation. By employing this method, they showed a 60% reduction in the required switching current.…”

Section: Built-in In-plane Magnetic Field Techniquementioning

confidence: 99%

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Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

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Electronic spins provide an additional degree of freedom that can be used in modern spin-based electronic devices. Some benefits of spintronic devices include nonvolatility, energy efficiency, high endurance, and CMOS compatibility, which can be leveraged for data processing and storage applications in today's digital era. To implement such functionalities, controlling and manipulating electron spins is of prime interest. One of the efficient ways of achieving this in spintronics is to use the electric field to control electron spin or magnetism through the voltage-controlled magnetic anisotropy (VCMA) effect. VCMA avoids the movement of charges and significantly reduces the Ohmic loss. This article reviews VCMA-based spintronic devices for magnetic memory applications. First, we briefly discuss the VCMA effect and various mechanisms explaining its physical origin. We then mention various challenges in VCMA that impede it for practical VCMA-based magnetic memory. We review various techniques to address them, such as field-free switching operation, write error rate improvement, widening the operation window, enhancing the VCMA coefficient, and ensuring fast-read operation with low read disturbance. Finally, we draw conclusions outlining the future perspectives.

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Section: A Phenomenological Descriptionmentioning

confidence: 99%

Section: Built-in In-plane Magnetic Field Techniquementioning

confidence: 99%

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Mishra,

Sravani,

Bose

et al. 2024

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Some works suggest that SOT-MRAM requires a lower write time and a lower write energy than STT-MRAM [40][41][42][43]. On the other hand, the results presented in Reference [26] show that VCMA-MeRAMs outperform STT-MRAM in terms of area, speed and energy consumption.…”

Section: Wl Slmentioning

confidence: 99%

Magnetic Tunnel Junction Applications

Maciel

Marques

Naviner

et al. 2019

Sensors

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Spin-based devices can reduce energy leakage and thus increase energy efficiency. They have been seen as an approach to overcoming the constraints of CMOS downscaling, specifically, the Magnetic Tunnel Junction (MTJ) which has been the focus of much research in recent years. Its nonvolatility, scalability and low power consumption are highly attractive when applied in several components. This paper aims at providing a survey of a selection of MTJ applications such as memory and analog to digital converter, among others.

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Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

Mishra,

Bhuktare

2024

Applied Physics Letters

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Enhancing the performance of magnetic random access memories (MRAMs) is crucial, considering speed, energy efficiency, and endurance. Spin-orbit torque-based MRAMs offer ultrafast operation and enhanced reliability. Still, the energy efficiency and external magnetic field requirement for deterministic switching of nanomagnets with perpendicular magnetic anisotropy (PMA) are a significant hurdle. To address these issues, one of the proposed solutions employs a conically magnetized free layer magnetic tunnel junction device featuring second-order PMA. This approach can minimize the required switching current density by leveraging the interplay between first- and second-order PMA energies. Additionally, coupling with exchange bias from the antiferromagnet can eliminate the need for an external field entirely. Our analysis investigates the impact of current density (magnitude and rise/fall time), first- and second-order PMA fields, exchange bias, and field-like torque on the device's switching performance. By optimizing the perpendicular magnetic anisotropies, we report improvement in the write error rate from 10−4 to 10−7. Our findings hold promise for magnetic memory applications.

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Write Margin Analysis of Spin–Orbit Torque Switching Using Field-Assisted Method

Cited by 5 publications

References 43 publications

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Voltage-controlled magnetic anisotropy-based spintronic devices for magnetic memory applications: Challenges and perspectives

Magnetic Tunnel Junction Applications

Write error rate analysis of field-free spin-orbit torque switching in conically magnetized free layer nanomagnet

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