Magnetic Tunnel Junction Applications

Maciel, Nilson; Marques, Elaine Crespo; Naviner, Lírida Alves de Barros; Zhou, Yongliang; Cai, Hao

doi:10.3390/s20010121

Cited by 46 publications

(25 citation statements)

References 75 publications

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“…Where h, m, and a are reduced Planck's constant, effective mass of the electron and lattice spacing in the model, respectively. The retarded Green's function describing this device is computed as per [19] ( ) = [( + ) − − ∑ − ∑ ] −1 (8) and advanced Green's function as ( ) = ( ) + ( 9)…”

Section: Synapse and Neuron Modelingmentioning

confidence: 99%

Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

Lone¹,

Amara²,

Fariborzi³

2021

Preprint

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The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.

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Section: Synapse and Neuron Modelingmentioning

confidence: 99%

Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

Lone¹,

Amara²,

Fariborzi³

2021

Preprint

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“…There are various spintronic devices like spin-valve [240], MTJ [81,[241][242][243][244][245], ferroelectric tunnel junction (FTJ) [246][247][248], domain wall [249][250][251][252][253][254][255][256][257], Skyrmion [258][259][260][261]and all spin logic (ASL) devices [262][263][264][265][266][267][268][269], etc. have been reported in the literature.…”

Section: Hybrid Cmos/mtj Circuitsmentioning

confidence: 99%

“…Various hybrid CMOS/MTJ circuits are realized using this approach, a few of them are NV-NAND/AND, NV-NOR/OR and NV-XNOR/XOR [241,305], magnetic flip-flops [306,307], magnetic look up table [92,308], magnetic full adder [31,290,303,[309][310][311][312], magnetic decoder [313], magnetic true random number generator [314][315][316], magnetic arithmetic logic unit (ALU) [317,318] and magnetic cryptographic circuits [319] etc.. Due to high magnetic sensitivity of MTJ, hybrid circuits are further used in developing the magnetic sensors [14,320,321], NV-FPGA circuit [92,[322][323][324][325][326][327][328][329][330][331], NVternary content addressable memory (TCAM) memory [332][333][334][335][336][337][338][339], NV random access logic LSI unit [38,340], ultra-lowpower VLSI design processor…”

Section: (Iii)mentioning

confidence: 99%

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

et al. 2020

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Spintronics is one of the growing research areas which has the capability to overcome the issues of static power dissipation and volatility suffered by the complementary metal-oxide-semiconductor (CMOS) industry. Magnetic tunnel junction (MTJ), one of the prominent spintronic devices, is not only used to develop the fully non-volatile-logic (NV-L) but combines magnetism and electronics to develop next-generation NVmemory (NV-M) and hybrid CMOS/MTJ circuits. To be specific towards hybrid CMOS/MTJ circuits, the fabrication of first hybrid full-adder in 2009, fabrication of MTJ based 240-tile NV-field programmable gate array (NV-FPGA) chip in 2013, fabrication of a 3000-6-input-LUTs based NV-FPGA chip in 2015, fabrication of MTJ based NV-logic-in-memory-large scale integration (NV-LIM-LSI) in 2017 and recently the fabrication of a full hybrid magnetic/CMOS System on Chip (SoC) under EU GREAT Project in 2019 has strengthened the belief and motivated the researcher to be continued in this domain. This review article aims to provide the complete design flow of hybrid CMOS/MTJ circuits developed using one of the fab compatible MTJ spintronic devices and its integration with conventional CMOS logic. The broad coverage of the article is MTJ construction, its switching mechanisms, a brief history of various compact models, reliability issues, and the concept of logic-in-memory (LIM) architecture. Finally, the article concludes with the challenges and future prospects of hybrid CMOS/MTJ circuits, which will motivate people in academia to cultivate research in this domain and industry to realize the prototype for a wide range of potential applications.

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“…From 1950 to 1990, silicon technology grew exponentially while the lack of tools and technology forced molecular device research in its nascent state. From the early 1990, as attempts for making molecular devices gained momentum, the spintronics research grew tremendously and became commercially successful 2 . The parallel growth of two fields led to a new field of molecular spintronics 3 .…”

Section: Introductionmentioning

confidence: 99%

“…To harness the industrial success of tunneling magnetoresistance devices 2 , we have explored a magnetic tunnel junction (MTJ) based MSD (i.e., MTJMSD approach). This MTJMSD method is intended to overcome limitations associated with conventional approaches.…”

Section: Introductionmentioning

confidence: 99%

Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

Tyagi

Brown

Grizzle

et al. 2021

Sci Rep

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Nearly 70 years old dream of incorporating molecule as the device element is still challenged by competing defects in almost every experimentally tested molecular device approach. This paper focuses on the magnetic tunnel junction (MTJ) based molecular spintronics device (MTJMSD) method. An MTJMSD utilizes a tunnel barrier to ensure a robust and mass-producible physical gap between two ferromagnetic electrodes. MTJMSD approach may benefit from MTJ's industrial practices; however, the MTJMSD approach still needs to overcome additional challenges arising from the inclusion of magnetic molecules in conjunction with competing defects. Molecular device channels are covalently bonded between two ferromagnets across the insulating barrier. An insulating barrier may possess a variety of potential defects arising during the fabrication or operational phase. This paper describes an experimental and theoretical study of molecular coupling between ferromagnets in the presence of the competing coupling via an insulating tunnel barrier. We discuss the experimental observations of hillocks and pinhole-type defects producing inter-layer coupling that compete with molecular device elements. We performed theoretical simulations to encompass a wide range of competition between molecules and defects. Monte Carlo Simulation (MCS) was used for investigating the defect-induced inter-layer coupling on MTJMSD. Our research may help understand and design molecular spintronics devices utilizing various insulating spacers such as aluminum oxide (AlOx) and magnesium oxide (MgO) on a wide range of metal electrodes. This paper intends to provide practical insights for researchers intending to investigate the molecular device properties via the MTJMSD approach and do not have a background in magnetic tunnel junction fabrication.

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Magnetic Tunnel Junction Applications

Cited by 46 publications

References 75 publications

Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

From MTJ Device to Hybrid CMOS/MTJ Circuits: A Review

Molecular coupling competing with defects within insulator of the magnetic tunnel junction-based molecular spintronics devices

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