Widely power-tunable polarization-independent ultrafast mode-locked fiber laser using bulk InN as saturable absorber

Jimenez-Rodriguez, M.; Monteagudo-Lerma, L.; Monroy, E.; González‐Herráez, Miguel; Naranjo, F. B.

doi:10.1364/oe.25.005366

Cited by 12 publications

(2 citation statements)

References 43 publications

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“…Compared with these materials, related studies on InN are immature [90]. However, when the bandgap of InN nanosheets was corrected to 0.7 eV [91,92], it attracted attention because it could be a promising material in the field of near-infrared luminescent devices [93,94] and lasers [95,96]. Moreover, InN presents the highest electron mobility and saturated electron drift rate among all III-nitride semiconductors [97], suggesting that InN nanosheets may be a potential candidate for infrared detectors [98][99][100], tera-hertz devices [101,102] and high-frequency solar cells [103,104].…”

Section: Optical Propertiesmentioning

confidence: 99%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

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As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

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Section: Optical Propertiesmentioning

confidence: 99%

Recent progress in III-nitride nanosheets: properties, materials and applications

Huang

Wang

et al. 2021

Semicond. Sci. Technol.

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“…Thus, the laser cavity behaves as a dispersion-managed cavity [41,42], with a net dispersion coefficient of −0.21 ps 2 , operating in the anomalous dispersion regime. Due to the wurtzite structure of the saturable absorber, no polarization controller was added to the laser cavity, as the material is polarized independently for light impinging along its z-axis [43].…”

Section: Pulsed Laser Operationmentioning

confidence: 99%

High-Quality, InN-Based, Saturable Absorbers for Ultrafast Laser Development

et al. 2020

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New fabrication methods are strongly demanded for the development of thin-film saturable absorbers with improved optical properties (absorption band, modulation depth, nonlinear optical response). In this sense, we investigate the performance of indium nitride (InN) epitaxial layers with low residual carrier concentration (<1018 cm−3), which results in improved performance at telecom wavelengths (1560 nm). These materials have demonstrated a huge modulation depth of 23% and a saturation fluence of 830 µJ/cm2, and a large saturable absorption around −3 × 104 cm/GW has been observed, attaining an enhanced, nonlinear change in transmittance. We have studied the use of such InN layers as semiconductor saturable absorber mirrors (SESAMs) for an erbium (Er)-doped fiber laser to perform mode-locking generation at 1560 nm. We demonstrate highly stable, ultrashort (134 fs) pulses with an energy of up to 5.6 nJ.

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