Recent progress in III-nitride nanosheets: properties, materials and applications

Abstract

As compared with their bulk materials, III-nitride nanosheets, including gallium nitride, aluminium nitride, indium nitride, reveal wider bandgap, enhanced optical properties, anomalously temperature-dependent thermal conductivity, etc, which are more suitable for the fabrication of nano-photodetectors, nano-field electron transistors, etc, for the application in the fields of nano-optoelectronics and nano-electronics. Although the properties of III-nitrides have been predicted based on the first-principles calculation, the experimental realization of III-nitride nanosheets has been restricted primarily due to dangling bonds on the surface and strong built-in electrostatic field caused by wurtzite/zinc-blende structures. To tackle these issues, several effective approaches have been introduced, and the distinct progress has been achieved during the past decade. In this review, the simulation and prediction of properties of III-nitride nanosheets are outlined, and the corresponding solutions and novel developed techniques for realisation of III-nitride nanosheets and defect control are discussed in depth. Furthermore, the corresponding devices based on the as-grown III-nitride nanosheets are introduced accordingly. Moreover, perspectives toward the further development of III-nitrides nanosheets and devices are also discussed.

Electronic Properties of Zn2V(1–x)NbxN3 Alloys to Model Novel Materials for Light-Emitting Diodes

“…Indeed, there are several reported studies of complex semiconductors belonging to the III–V family consisting of elements of group III (B, Al, Ga, and In) and group V (N, P, As, and Sb). − In particular, III–N alloys exhibit an ultrawide band gap due to the quantum confinement effect . Therefore, III–N alloys find applications in blue LEDs and ultraviolet optoelectronic devices − and in high-power electronic devices . Currently, InGa-N alloys are mostly used in industry due to their favorable electronic properties and established synthetic routes.…”

“… 1 − 13 In particular, III–N alloys exhibit an ultrawide band gap due to the quantum confinement effect. 14 Therefore, III–N alloys find applications in blue LEDs and ultraviolet optoelectronic devices 15 − 17 and in high-power electronic devices. 17 Currently, InGa-N alloys are mostly used in industry due to their favorable electronic properties and established synthetic routes.…”

Numerical Evaluation of the Elastic Moduli of AlN and GaN Nanosheets

“…Deep ultraviolet light-emitting diode (DUV-LED) [12,13]; hydrogen storage [14]; toxic pollutants sensors [15]; cathode material for Al-ion batteries [16] AlN, GaN Toxic gas detectors [2,[17][18][19][20][21]; field effect transistors (FETs) [1,22]; anode materials for Li-and Na-ion batteries [1,23- The diatomic AlN and GaN nanostructures, presented in Figure 1, are characterized by an interatomic bond length, a Al(Ga)-N , whose values as reported in the literature are shown in Table 1. It is evident that there is no consensus among the research community concerning the bond length values for aluminum nitride and gallium nitride nanostructures with a graphene-like lattice.…”

Structures, properties and applications of two-dimensional metal nitrides: from nitride MXene to other metal nitrides

“…The 2D IIIANs (including AlN, GaN, InN and TlN) exhibit the graphene-like planar honeycomb structures (see figure 7(a) with 2D AlN as a representative), which are fairly different from the buckling surface structures of their corresponding wurtzite bulk structure [59][60][61]. Two-dimensional IIIANs have been experimentally prepared along with great amount of theoretical investigations, showing great scientific value [176][177][178][179][180]. Comparing with the extensively reported 2D AlN, GaN and InN, there are fewer studies on TlN [181,182], concerning the high toxicity of thallium element as well as the lack of theoretical support on its superiority among the 2D III-ANs.…”