Two-dimensional (2D) material-based heterojunction solar cells have attracted significant interests due to their potential in low-cost photovoltaic applications. Herein, a novel MXene/GaAs heterojunction solar cell with high-efficiency and excellent stability...
High-performance nonpolar a-plane GaN-based metal–semiconductor–metal (MSM) ultraviolet (UV) photo-detectors are fabricated based on high-quality nonpolar a-plane GaN epitaxial films grown on LaAlO3(100) substrates.
Nonpolar a-plane GaN-based metal-semiconductor–metal UV PDs, with high responsivity and low dark current, were made from a-plane GaN epitaxial films grown on r-plane sapphire by controlling the dislocation density.
A high-quality AlN epitaxial film has been grown on a Si(111) substrate by metal–organic chemical vapor deposition through designing the AlN nucleation layer.
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