High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

Wang, Wenliang; Yang, Zhipeng; Lu, Zhenya; Li, Guoqiang

doi:10.1039/c8tc02281j

Cited by 34 publications

(21 citation statements)

References 35 publications

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“…5f-h the pure Ag and Au NP devices, the Ag 4 Au 3 alloy exhibited a higher photoresponse. For instance, the R, D, and EQE of Ag 4 Au 3 were 112 A W −1 , 2.4 × 10 12 jones, and 3.6 × 10 4 %, respectively, at 0.03 mW mm −2 of illumination power, which were higher than those of previously reported GaN-based UV photodetectors with Ag NPs [26], with various GaN films [40,[44][45][46][47][48], and with graphene layers [49][50][51] as summarized in Table 1. However, the Ag 3.5 Au 3.5 and Ag 3 Au 4 devices exhibited somewhat moderate photoresponses with decreasing trend as the Au ratio was increased.…”

Section: Uv Photoresponse Of Monometallic Ag and Au Npsmentioning

confidence: 63%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

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HIGHLIGHTS • Enhancement of UV photoresponse by the incorporation of various plasmonic nanoparticles in the detector architecture. • Detailed explanation for the photocurrent enhancement mechanism by the finite-difference time domain (FDTD) simulation and strong plasmon absorption. • Systematic comparison and demonstration of the superior photoresponse of homogeneously alloyed AgAu nanoparticles as compared to the monometallic nanoparticles. ABSTRACT Very small metallic nanostructures, i.e., plasmonic nanoparticles (NPs), can demonstrate the localized surface plasmon resonance (LSPR) effect, a characteristic of the strong light absorption, scattering and localized electromagnetic field via the collective oscillation of surface electrons upon on the excitation by the incident photons. The LSPR of plasmonic NPs can significantly improve the photoresponse of the photodetectors. In this work, significantly enhanced photoresponse of UV photodetectors is demonstrated by the incorporation of various plasmonic NPs in the detector architecture. Various size and elemental composition of monometallic Ag and Au NPs, as well as bimetallic alloy AgAu NPs, are fabricated on GaN (0001) by the solid-state dewetting approach. The photoresponse of various NPs are tailored based on the geometric and elemental evolution of NPs, resulting in the highly enhanced photoresponsivity of 112 A W −1 , detectivity of 2.4 × 10 12 Jones and external quantum efficiency of 3.6 × 10 4 % with the high Ag percentage of AgAu alloy NPs at a low bias of 0.1 V. The AgAu alloy NP detector also demonstrates a fast photoresponse with the relatively short rise and fall time of less than 160 and 630 ms, respectively. The improved photoresponse with the AgAu alloy NPs is correlated with the simultaneous effect of strong plasmon absorption and scattering, increased injection of hot electrons into the GaN conduction band and reduced barrier height at the alloy NPs/GaN interface.

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Section: Uv Photoresponse Of Monometallic Ag and Au Npsmentioning

confidence: 63%

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

et al. 2020

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“…As alternatives, wide‐bandgap direct semiconductors with negligible or even without absorption in the visible region, such as GaN, SiC ZnO, etc., have attracted tremendous attention due to their good thermal, chemical, and photoelectric stabilities. In 2018, Wang et al fabricated GaN‐based UV photodetectors via metal‐organic chemical vapor deposition (MOCVD) with a low dark current of 1.3 nA at 2 V, while the ratio of photocurrent ( I ph ) to dark current ( I d ) was only 2 . In addition, commercial growth methods of GaN semiconductor, such as MOCVD and molecular beam epitaxy (MBE), are expensive and always require high growth temperatures.…”

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confidence: 99%

ZnO‐Based Ultraviolet Photodetectors with Tunable Spectral Responses

Zheng

Wang

et al. 2019

Physica Rapid Research Ltrs

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Conventionally, wavelength‐selective ultraviolet photodetection is achieved by using broadband inorganic photodiodes coupled with optical filters, which significantly increases the complexity and fabricating cost of devices for high pixel density imaging systems. Here, a facile approach to achieve tunable spectral response without filters is demonstrated. The devices are based on ZnO heterojunctions, and the response spectra are effectively modulated by tuning the position of charge generation, which results in distinct charge‐collection efficiencies. After optimization, the ZnO/poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] (PTAA) photodiodes exhibit narrowband ultraviolet (UV) response with a full width at half maximum (FWHM) of <25 nm, and the NiOx/ZnO devices reveal relatively broader photoresponse. All of these devices demonstrate relatively low dark currents and noises, high responsivities and detectivities, and fast response speeds. This work proves the great potential of ZnO thin films for UV detection and also first provides an alternative approach to effectively tune the spectral response.

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“…One approach to increase the polarization‐sensitivity in such detectors is to apply anisotropic in‐plane strain to reduce the symmetry within the structure . Nonpolar and semipolar III‐nitrides offer polarization‐sensitive detection due to the anisotropic in‐plane strain and the resulting highly polarization‐sensitive absorption . Hence, the in‐plane crystal asymmetry in nonpolar GaN films can be used to increase the sensitivity to the polarization of the incident light .…”

Section: Successes and Challengesmentioning

confidence: 99%

“…In addition, detection in ultra‐violet (UV) wavelengths, which is essential for solar blind communication and sensing applications, can be obtained by III‐nitride systems. Therefore, nonpolar and semipolar III‐nitrides offer high‐responsivity UV‐PSPDs …”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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High responsivity and low dark current nonpolar GaN-based ultraviolet photo-detectors

Abstract: Nonpolar a-plane GaN-based metal-semiconductor–metal UV PDs, with high responsivity and low dark current, were made from a-plane GaN epitaxial films grown on r-plane sapphire by controlling the dislocation density.

Cited by 34 publications

References 35 publications

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

Improved Photoresponse of UV Photodetectors by the Incorporation of Plasmonic Nanoparticles on GaN Through the Resonant Coupling of Localized Surface Plasmon Resonance

ZnO‐Based Ultraviolet Photodetectors with Tunable Spectral Responses

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

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