Wideband Millimeter-Wave On-Chip Quadrature Coupler With Improved In-Band Flatness in 0.13-&lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$\mu$ &lt;/tex-math&gt;
                  &lt;/inline-formula&gt;m SiGe Technology

Hou, Zhang Ju; Yang, Yang; Chiu, Leung; Zhu, Xi; Xue, Quan

doi:10.1109/led.2018.2814997

Cited by 14 publications

(4 citation statements)

References 9 publications

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“…Several techniques and architectures of coupled-line couplers using microstrip technology have been reported on the literature [10]- [13]. However, many of these techniques [10], [11], [13] rely on the use of the so-called coupled microstrip lines in a broadside configuration to achieve the necessary coupling.…”

Section: B 3-db Couplermentioning

confidence: 99%

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mm-Wave Through-Load Element for On-Wafer Measurement Applications

Margalef‐Rovira

Occello

Saadi³

et al. 2021

IEEE Trans. Circuits Syst. I

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This paper presents an innovative Through-Load element aimed at characterization applications at mm-wave frequencies. The proposed structure can behave as a Through connection or as a 50-Ω load depending on a DC control voltage. Among other potential applications, this system can be used to implement a transfer switch or an attenuator. A demonstrator was fabricated and measured in the STM 55-nm BiCMOS technology. Over a wide bandwidth, from 55 GHz up to 170 GHz, experimental measurements demonstrate a maximum 1.6-dB of insertion loss when behaving as a Through connection and a minimum 14-dB of insertion loss when behaving as a 50-Ω load. In both cases, the return loss is better than 10 dB. The insertion loss at 90 GHz is 0.6 dB for the Through connection and 20 dB for the 50-Ω load connection.

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Section: B 3-db Couplermentioning

confidence: 99%

“…In this scenario, compensation in order to equalize the phase velocity of the even-and odd-modes is necessary to improve the performance of the coupler. For example, authors in [11] propose a lumped LC circuit to improve the behavior of the proposed coupler. With this approach, they are able to achieve isolation levels beyond 20 dB.…”

Section: B 3-db Couplermentioning

confidence: 99%

mm-Wave Through-Load Element for On-Wafer Measurement Applications

Margalef‐Rovira

Occello

Saadi³

et al. 2021

IEEE Trans. Circuits Syst. I

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“…Recently, three-dimension (3D) system-in-package technology of low temperature co-fired ceramic (LTCC) uses capacitance increased vertically-interdigital-capacitors (VICs) [2,3] for circuit miniaturization with high Q-factors [4][5][6][7][8][9]. GaAs, SiGe, and CMOS have also been used to build compact passive components with lumped elements [10][11][12]. However, semiconductor process is not appropriate for passive circuit miniaturization when the working frequency is less than 1 GHz, because the required capacitance and inductance are very high.…”

Section: Introductionmentioning

confidence: 99%

LTCC-packaged Branch-line Coupler Using Capacitance Improved Capacitor for VHF-band Applications

Yu,

Zhou,

Shi

et al. 2024

PIER Letters

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A compact branch-line coupler is proposed with capacitance improved capacitor (CIC) using low-temperature co-fired ceramic (LTCC) packaged technology. The proposed CIC is constructed for higher capacitance without any size increment by further separated horizontal finger pads on VIC. The area of the coupler is only 10.3 × 9.4 × 1 mm 3 , which is equivalent to 0.0041 × 0.0035 × 0.0004λg 3 . The application frequency band covers maritime and aircraft navigation in the very high frequency (VHF)-band. The measured in-band S11, S21, S31, and S41 are better than −15, −4.1, −2.2, and −18 dB from 47 to 67 MHz, respectively. And the measured phase difference between the coupled and through ports is within 90 ± 0.2 • , which presents an excellent linear characteristic.

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“…Introduction: In the design of integrated circuits (ICs) for front-end systems, passive devices such as bandpass filters (BPFs) [1][2][3][4][5][6][7][8][9][10][11][12], power dividers [13][14][15] and couplers [16][17][18] usually occupy relatively large layout space. In order to reduce the yield cost of ICs, miniaturized design of passive devices is attracting increasing attention.…”

mentioning

confidence: 99%

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

Xu,

Xi,

Liu

et al. 2024

Electronics Letters

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A compact 60‐GHz on‐chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an inductor‐capacitor (LC) equivalent circuit model is conceived and analysed for further investigation of the transmission poles (TPs) and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured results are in good agreement. The measurements show that it has a centre frequency of 60.2 GHz with a bandwidth of 14%, and the minimum insertion loss (IL) within the passband is 2.57 dB. The chip size, excluding the feedings, is about 0.265 mm × 0.184 mm.

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Wideband Millimeter-Wave On-Chip Quadrature Coupler With Improved In-Band Flatness in 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu$ </tex-math> </inline-formula>m SiGe Technology

Cited by 14 publications

References 9 publications

mm-Wave Through-Load Element for On-Wafer Measurement Applications

mm-Wave Through-Load Element for On-Wafer Measurement Applications

LTCC-packaged Branch-line Coupler Using Capacitance Improved Capacitor for VHF-band Applications

A compact 60‐GHz on‐chip bandpass filter in GaAs technology

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