Wideband GaAs Gunn reflection amplification for the 18–26.5 GHz waveguide band

Koning, J.G. de; Goldwasser, R. E.; Hamilton, R.J.; Rosztoczy, F.E.

doi:10.1049/el:19750149

Cited by 5 publications

(2 citation statements)

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“…Reflection amplifiers utilizing Gunn diode were previously discussed [1,2]. However, the high current consumption and form factor of Gunn diode reflection amplifiers make them unsuitable for battery powered and miniaturized applications.…”

Section: Introductionmentioning

confidence: 99%

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An 8‐ to 12‐GHz wideband negative resistance reflection amplifier

Chan

Fusco

2012

Micro & Optical Tech Letters

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This article describes the design and characterization of a wideband, 40% bandwidth microwave one port reflection amplifier. Experimental and simulation results are presented. The one port reflection amplifier uses a silicon bipolar transistor and demonstrates a return gain of better than 10 dB from 8 to 11.5 GHz. The gain of the refection amplifier can be easily DC modulated. In addition, a pair of reflection amplifiers is used to create a wideband bidirectional amplifier.ABSTRACT: Electromagnetic responses of 1D dielectric resonator arrays variously positioned with respect to the incident wave are investigated in standard waveguides and free space. It is demonstrated that interaction between resonators causes splitting of the array resonance with the formation of several states that exhibit different capabilities for supporting wave transfer.

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Section: Introductionmentioning

confidence: 99%

“…The effective medium theory, which is conventionally used at the analysis of metamaterial properties [1,2], does not consider the situations when interaction between building elements of a metamaterial could cause resonance mode splitting and appearance of spatial nonuniformities similar to those described in Ref. 3.…”

Section: Introductionmentioning

confidence: 99%