An 8‐ to 12‐GHz wideband negative resistance reflection amplifier

Chan, P.K.; Fusco, Vincent

doi:10.1002/mop.26597

Cited by 3 publications

(3 citation statements)

References 4 publications

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“…To be stable, such a network should always be terminated to a resistance greater than the input resistance of the reflection amplifier with a sufficient margin. The reported reflection amplifiers are usually narrowband and generate a large positive group delay [42], [47], [48] with a recent report of a 40% bandwidth at -band [49].…”

Section: A Suitable Active Circuit Blocks For Loss Compensationmentioning

confidence: 99%

Realizing Non-Foster Reactive Elements Using Negative-Group-Delay Networks

Mirzaei

Eleftheriades

2013

IEEE Trans. Microwave Theory Techn.

109

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An intimate relation is established between non-Foster reactive elements and loss-compensated negative-group-delay (NGD) networks. It is shown that any possible network configuration containing a class of non-Foster elements operates as an NGD network. Likewise, it is demonstrated that a loss-compensated NGD network represents a reactive network with a non-Foster behavior. Consequently, these two properties can be intimately linked together and NGD networks can be utilized to implement non-Foster elements, such as negative capacitors and inductors. This result introduces another perspective in realizing non-Foster reactive elements, leading to new designs that are well behaved and more predictable in terms of stability and operation than traditional designs using negative impedance inverters and negative impedance converters. Based on this concept, loss-compensated NGD networks are proposed for realizing high-quality non-Foster reactive elements. Furthermore, entirely passive non-Foster elements with a limited quality ( ) factor are proposed for which the minimum factor and the maximum achievable bandwidth are inversely related. It is shown that the design of non-Foster reactive elements using NGD networks can lead to the realization of standalone unilateral non-Foster reactive elements in a certain bandwidth. Examples of such non-Foster reactive elements and networks are demonstrated experimentally and shown to be stable.Index Terms-Dispersion engineering, negative group delay (NGD), negative group velocity (NGV), non-Foster reactances.

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Section: A Suitable Active Circuit Blocks For Loss Compensationmentioning

confidence: 99%

Realizing Non-Foster Reactive Elements Using Negative-Group-Delay Networks

Mirzaei

Eleftheriades

2013

IEEE Trans. Microwave Theory Techn.

109

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“…Consequently, a challenge in such circuits consists in controlling the stability of the circuit [15], [19], [21], as well as its bandwidth [26].…”

Section: Reflection Amplifier Designmentioning

confidence: 99%

Enhancement of RF Tag Backscatter Efficiency With Low-Power Reflection Amplifiers

Kimionis

Georgiadis

Collado

et al. 2014

IEEE Trans. Microwave Theory Techn.

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Increasing backscatter tag communication ranges is crucial for the development of low-power long-range wireless sensor networks. A major limitation for increasing the signal-to-noise ratio (SNR) for RF identification tags lies in the fact that tag antennas are terminated with passive loads for modulation, which yields reflection-coefficient values less than unity. Recent work in the field has exploited reflection amplifiers that achieve reflection-coefficient values larger than unity to increase the communication range. However, most of these systems rely on increasing the reflection coefficient at one modulation state only, which is suboptimal. In this paper, an analysis is given for the optimal way to utilize a reflection amplifier and how this compares to suboptimal practices. To demonstrate the concept, a tag is designed that achieves reflection-coefficient values higher than unity for both states in the 900-930-MHz band. The two values are antipodal, thus maximizing the tag SNR for a given amplifier. The system comprises of an ultra-low-power reflection amplifier with up to 10.2-dB gain and sub-milliwatt power consumption, and a phase-shift modulator that selectively alternates the phase of the backscatter signal between 0 and 180 . The reflection amplifier-phase modulator system is experimentally characterized in terms of gain, power consumption, and backscatter efficiency.Index Terms-Backscatter radio, increased singal-to-noise ratio (SNR), reflection amplifier, RF identification (RFID) sensors, scattering efficiency.

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“…The phenomenon is most characteristically present in tunnel diodes, lambda diodes, and Gunn diodes (36)(37)(38). Besides memories, NDR can be used for applications such as oscillators, amplifiers (39,40), and switches. Lately, the rise of neuromorphic computing architectures (41) has also turned a large amount of attention to NDR devices, due to their ability to mimic biological neurons (42)(43)(44).…”

Section: Introductionmentioning

confidence: 99%

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

et al. 2023

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The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode. This new diode is based on a horizontal PN junction in silicon with a unique layout providing the NDR feature, and we show how it can easily be implemented into a photonic micro-ring resonator to enable a bistable device with a fully optical readout in the telecom regime. Our result is an important stepping stone on the way to new nonlinear electro-optic and neuromorphic computing structures based on this new NDR diode.

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An 8‐ to 12‐GHz wideband negative resistance reflection amplifier

Cited by 3 publications

References 4 publications

Realizing Non-Foster Reactive Elements Using Negative-Group-Delay Networks

Realizing Non-Foster Reactive Elements Using Negative-Group-Delay Networks

Enhancement of RF Tag Backscatter Efficiency With Low-Power Reflection Amplifiers

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

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