2020
DOI: 10.1109/tthz.2020.3006750
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Wideband Double Leaky Slot Lens Antennas in CMOS Technology at Submillimeter Wavelengths

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Cited by 30 publications
(31 citation statements)
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“…HMSIW-and SIW-based antennas can be fabricated using a printed circuit board (PCB), low temperature co-fired ceramic (LTCC), or electronic printing technology. LWA can also be integrated into silicon-based structures [20] to achieve a miniaturized transceiver. LWA can be realized on the dielectric waveguide [21] dielectric image line [22], wedge-like waveguide [23], gap waveguides [24][27], and corrugated SIW [28] for mm-wave and Xband applications.…”
Section: Introductionmentioning
confidence: 99%
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“…HMSIW-and SIW-based antennas can be fabricated using a printed circuit board (PCB), low temperature co-fired ceramic (LTCC), or electronic printing technology. LWA can also be integrated into silicon-based structures [20] to achieve a miniaturized transceiver. LWA can be realized on the dielectric waveguide [21] dielectric image line [22], wedge-like waveguide [23], gap waveguides [24][27], and corrugated SIW [28] for mm-wave and Xband applications.…”
Section: Introductionmentioning
confidence: 99%
“…Most of the reported LWAs in the literature are unidirectional antennas, but bidirectional LWA can be designed by implementing different excitation ports [31]. It should be noted that LWA is also a suitable candidate as the on-chip antenna in CMOS and Silicon-based technology at sub-THz frequency bands noting the relaxed metal density rules [20].…”
Section: Introductionmentioning
confidence: 99%
“…In order to achieve the required performance for passive imaging, a wideband antenna should efficiently couple incident radiation over a few hundreds of GHz of bandwidth to detectors that are characterized with a Noise Equivalent Power (NEP) in the order of a pW/ √ Hz [12]. Efficient wideband antenna operation is demonstrated with an on-chip ring antenna in SiGe-HBT technology [13] and with a double leaky slot antenna in CMOS technology [14] in combination with a silicon lens. Low NEP detectors have been demonstrated in high performance III-V technologies [15].…”
mentioning
confidence: 99%
“…The state-of-the-art NEP of 3.5 pW/ √ Hz at 300 GHz is just recently presented using a differential transistor pair at zero bias [25]. The performance in terms of bandwidth in [14] and NEP in [25] is approaching the level where first THz passive imagers might be realized [12].…”
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confidence: 99%
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