Wideband Class-E power amplifier with flat gain for FM radio transmitters

Nonlinear-Embedding Design Methodology Oriented to LDMOS Power Amplifiers

“…The current generator together with the capacitive network constitute the intrinsic device for which we define the intrinsic reference plane. To get to the actual device terminals, the so- [20] GaN HEMT F 0% 7.7 W 80.2% 2015 [21] LDMOS E 20% > 70 W 82% 2016 [22] GaN HEMT AB 27% 4.9 W 68% (PAE) 2016 [23] GaN HEMT F 62% 9÷11 W > 60% 2017 [24] GaN HEMT J 30% 4÷4.7 W 40÷50% (PAE) 2017 [ called extrinsic reference plane, there exist some structures (bonding wires, package, etc. ), that introduce linear parasitic effects that must be also considered.…”

“…In case A there is no feedback element between the input and output ports of the device. Such a practical hypothesis is commonly adopted [15], [19]- [21], [24] since it strongly simplifies the evaluation of the extrinsic load impedances, by reversely isolating the two ports of the device. In case B we introduced the capacitance C gd as a feedback element, in order to show that the limited accuracy is largely ascribable to the linearity hyphothesis.…”

“…Designers can deal with these effects by using some simplified models. As an example, for a class-E design, the capacitive behavior of the output port is typically modeled as either a linear or a nonlinear capacitor [15], [16], [21], according to the level of accuracy the designer wants to achieve.…”