Wide-gap a-Si1−xCx:H solar cells with high light-induced stability for multijunction structure applications

Yunaz, Ihsanul Afdi; Nagashima, Hiroshi; Hamashita, Daisuke; Miyajima, Shinsuke; Konagai, Makoto

doi:10.1016/j.solmat.2010.04.039

Cited by 17 publications

(12 citation statements)

References 9 publications

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“…The EQE improves for the cell with reduced d, as shown in Fig. 15 However, for the top cell of a multijunction solar cell, the small reduction in the V oc may not be a problem as the usual bottleneck is current density. A significant improvement in the blue response of the EQE is visible for thickness d ¼ 8 nm of the p-layer.…”

Section: Resultsmentioning

confidence: 95%

Light management and efficient carrier generation with a highly transparent window layer for a multijunction amorphous silicon solar cell

Iftiquar

Lee

et al. 2013

J. Photon. Energy

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P-layer of a p-i-n type amorphous silicon solar cell helps in creating a built-in electric field inside the cell; it also contributes to parasitic absorption loss of incident light. Here, we report optimization of these two characteristic contributions of the p-layer of the cell. We used a highly transparent p-type hydrogenated amorphous silicon carbide (p-a-Si 1−x C x ∶H) window layer in an amorphous silicon solar cell. With the increased transparency of the p-type layer, the solar cell showed an improvement in short-circuit current density by 17%, along with improvement in blue response of its external quantum efficiency, although further thinner player showed lower open-circuit voltage. Such a cell shows low light-induced degradation and a promise to be used in high-efficiency multijunction solar cell.

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Section: Resultsmentioning

confidence: 95%

Light management and efficient carrier generation with a highly transparent window layer for a multijunction amorphous silicon solar cell

Iftiquar

Lee

et al. 2013

J. Photon. Energy

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“…The cathodic vacuum arc is generally produced from the cold cathode whose material has to be deposited. The ions are ejected perpendicular to the cathode and macro particles are ejected at [10][11][12][13][14][15][16][17][18][19][20] to the cathode surface.…”

Section: Electrical and Optical Properties Of Lmsmentioning

confidence: 99%

“…10 Phosphorus-doped amorphous silicon carbide (a-SiC:H) also demonstrated the ability to passivate the c-Si substrates and highly doped n-type emitters in the solar cells.…”

Section: Introductionmentioning

confidence: 99%

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

et al. 2014

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This paper reports the growth and properties of phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin films deposited at room temperature by a filtered cathodic vacuum arc (FCVA) technique using a phosphorous doped solid silicon target as a cathode in the presence of acetylene gas. These films have been characterized by X-ray diffraction (XRD), scanning electron microscopy, energy dispersive X-ray analysis, dark conductivity, activation energy, optical band gap, secondary ion mass spectroscopy, Raman spectroscopy, current-voltage, capacitance-voltage and photoconductive measurements. XRD results exhibit predominantly an amorphous phase for the films.The effect of the arc current on the properties of P doped a-SiC:H films have been studied. A P doped a-SiC:H/c-Si heterojunction diode was fabricated which showed a diode ideality factor between 1.5 to 1.7 and the density of states were 9.6 Â 10 16 to 4.8 Â 10 17 cm À3 eV À1. The photo response behaviors of the P doped a-SiC:H films have been tested by measuring the change in the electrical resistance on light illumination with the fast response and recovery time as 7.8 to 9.5 and 6.2 to 12.8 s, respectively. The P doped a-SiC:H film deposited at a 30 A arc current has shown a photo response of $1.6% at an illumination intensity of $100 mW cm À2.

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“…Consequently high bandgap amorphous silicon alloys containing carbon, oxygen or both are considered as absorber materials for the top cell. Their single layer properties have been studied for some time [2][3][4][5][6][7][8] and recently their applicability in single and multijunction cells has been confirmed [9][10][11][12][13]]. Yet it is unclear which amorphous silicon alloy is preferable as top cell absorber.…”

Section: Introductionmentioning

confidence: 99%

Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

et al. 2015

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Since solar energy conversion by photovoltaics is most efficient for photon energies at the bandgap of the absorbing material the idea of combining absorber layers with different bandgaps in a multijunction cell has become popular. In silicon thin-film photovoltaics a multijunction stack with more than two subcells requires a high bandgap amorphous silicon alloy top cell absorber to achieve an optimal bandgap combination. We address the question whether amorphous silicon carbide (a-SiC:H) or amorphous silicon oxide (a-SiO:H) is more suited for this type of top cell absorber. Our single cell results show a better performance of amorphous silicon carbide with respect to fill factor and especially open circuit voltage at equivalent Tauc bandgaps. The microstructure factor of single layers indicates less void structure in amorphous silicon carbide than in amorphous silicon oxide. Yet photoconductivity of silicon oxide films seems to be higher which could be explained by the material being not truly intrinsic. On the other hand better cell performance of amorphous silicon carbide absorber layers might be connected to better hole transport in the cell.

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Wide-gap a-Si1−xCx:H solar cells with high light-induced stability for multijunction structure applications

Cited by 17 publications

References 9 publications

Light management and efficient carrier generation with a highly transparent window layer for a multijunction amorphous silicon solar cell

Light management and efficient carrier generation with a highly transparent window layer for a multijunction amorphous silicon solar cell

Investigations on phosphorous doped hydrogenated amorphous silicon carbide thin films deposited by a filtered cathodic vacuum arc technique for photo detecting applications

Comparison of silicon oxide and silicon carbide absorber materials in silicon thin-film solar cells

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