2006
DOI: 10.1049/el:20061303
|View full text |Cite
|
Sign up to set email alerts
|

Wide continuous tuning range of 221 nm by InP/air-gap vertical-cavity filters

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
5

Citation Types

0
15
0

Year Published

2007
2007
2021
2021

Publication Types

Select...
5
4

Relationship

0
9

Authors

Journals

citations
Cited by 19 publications
(15 citation statements)
references
References 6 publications
0
15
0
Order By: Relevance
“…The third interferometric spectrometer is based on the Fabry–Pérot (FP) principle [ 4 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. Although only two parallel transparent dielectric mirrors are involved, the FP interferometer is also highly complex and involves multipath interference.…”
Section: Introductionmentioning
confidence: 99%
“…The third interferometric spectrometer is based on the Fabry–Pérot (FP) principle [ 4 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 , 37 , 38 , 39 , 40 , 41 , 42 , 43 , 44 , 45 , 46 , 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 ]. Although only two parallel transparent dielectric mirrors are involved, the FP interferometer is also highly complex and involves multipath interference.…”
Section: Introductionmentioning
confidence: 99%
“…Research on highly efficient and compact tunable Fabry-Pérot filter devices ( Fig. 1) has been reported by using this technology approach [2][3][4]. Polarization selectivity can be added to these spectral membrane filters by introducing a periodic structure.…”
Section: Introductionmentioning
confidence: 99%
“…Such DBRs are necessarily made as microstructures, because of constraints posed by finite etch rates and mechanical stability of the completed air-gap structure. Examples taking advantage of relatively mature growth and processing include tunable InP-air DBRs for nearinfrared telecommunication wavelengths [1][2][3]. Development of sacrificial layer technologies has proved more challenging for wide bandgap III-nitride semiconductors, and progress to 2007 was covered in an extensive review [4].…”
Section: Introductionmentioning
confidence: 99%