The structure of compressively strained (GaIn)(NAs)/GaAs multi-quantum wells (MQWs) grown by MOVPE is investigated using TEM. The quaternary, metastable material exhibits a high structural perfection if a N concentration of 4% is not exceeded. Phase separation or clustering effects are not observed, and the In is dispersed homogeneously throughout the quantum wells. The interface roughness of the quantum wells to the GaAs barriers is in the order of several monolayers. Increasing the N content to above 4.5% results in a deterioration of the structure and of the homogeneity of the wells
Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal‐organic vapor phase epitaxy (MOVPE) at low temperatures under non‐equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying conditions, namely of the arsenic source partial pressure and of the growth rate on the structural quality of the quantum wells is studied. Up to a critical amount of incorporated nitrogen, high perfection layers can be obtained which show a roughness of the interfaces between the wells and the barriers in the range of only a few monolayers. Any phase separation effects have been excluded by exact control of the particular growth conditions. For the structural characterization of the layer systems, conventional and high resolution transmission electron microscopy have been applied.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.