Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology

Rantakari, Pekka; Malmqvist, R.; Samuelsson, C.; Leblanc, Rémy; Smith, Derek R.; Jönsson, Robert; Simon, Winfried; Saijets, Jan; Baggen, R.; Vaha-Heikkia, T.

doi:10.1049/iet-map.2010.0434

Cited by 15 publications

(15 citation statements)

References 6 publications

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“…Figure 12.17(b) and (c) show photographs and measured s-parameter data of such a GaAs MEMS SPST switch with a circuit area of 400 Â 680 mm 2 (including RF and DC pads). A CPW-based GaAs MEMS switch design was reported by Rantakari et al to have a loss of less than 1 dB with more than 12 dB of isolation up to 95 GHz, respectively [28]. Such a wideband microstrip-based GaAs MEMS switch circuit was reported by Malmqvist et al [39], having less than 1 dB of transmission loss up to 75 GHz and better than 10 dB of isolation up to 67 GHz.…”

Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 97%

“…radar and radiometric sensors) [18]. An ongoing trend is also with respect to the monolithic integration of RF-MEMS switches within RFIC/MMIC processes as some semiconductor IC foundries (Rockwell, OMMIC, IHP and Selex) have integrated MEMS switches on top of GaAs, SiGe and GaN substrates [25][26][27][28][29][30]. Nowadays, solid-state semiconductor switches are commonly used in such circuits but they are rather narrow band, nonlinear and have relatively high losses, especially at microwave and millimetre-wave frequencies.…”

Section: Reconfigurable Rf Circuits Using Rf-memsmentioning

confidence: 99%

“…These GaAs amplifiers showed no performance degradation after MEMS switch fabrication. In Europe, the MMIC foundry OMMIC (France) has recently developed an ohmic contact type of RF-MEMS switch using a GaAs process technology [28,39] (see Figure 12.17). In Europe, the MMIC foundry OMMIC (France) has recently developed an ohmic contact type of RF-MEMS switch using a GaAs process technology [28,39] (see Figure 12.17).…”

Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 99%

“…In order to characterize the RF power handling capability of some OMMIC GaAs MEMS switches, both hot and cold switching tests done at 1 and 4 GHz, respectively, were reported by Rantakari et al [28]. Figure 12.20(a) shows a photograph of a GaAs MEMS switch after such RF breakdown tests were carried out at FOI (Swedish Defence Research Agency).…”

Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 99%

See 3 more Smart Citations

Reconfigurable RF Circuits and RF‐MEMS

Malmqvist

Ouacha

Kaynak

et al. 2012

Microwave and Millimeter Wave Circuits and Systems

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Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 97%

Section: Reconfigurable Rf Circuits Using Rf-memsmentioning

confidence: 99%

Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 99%

Section: Monolithic Integration Of Rf-mems In Gaas/ Gan Mmic Processesmentioning

confidence: 99%

See 2 more Smart Citations

Reconfigurable RF Circuits and RF‐MEMS

Malmqvist

Ouacha

Kaynak

et al. 2012

Microwave and Millimeter Wave Circuits and Systems

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“…A Co-Planar Waveguide (CPW) based GaAs MEMS SPST series switch with less than 1 dB of losses up to 95 GHz (together with >15 dB of isolation up to 40 GHz) was presented in [9]. However, those GaAs MEMS switch circuits were made without any on-chip active RF circuitry.…”

Section: V-band/w-band Gaas Rf-mems Switching Circuits and On-chipmentioning

confidence: 99%

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

Malmqvist

Jönsson

Samuelsson

et al. 2013

CAS 2013 (International Semiconductor Conference)

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A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

Reyaz

Gustafsson

Samuelsson

et al. 2015

Int J RF and Microwave Comp Aid Eng

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This work presents a monolithic integrated reconfigurable active circuit consisting of a W‐band RF micro‐electro‐mechanical‐systems (MEMS) Dicke switch network and a wideband low‐noise amplifier (LNA) realized in a 70 nm gallium arsenide (GaAs) metamorphic high electron mobility transistor process technology. The RF‐MEMS LNA has a measured gain of 10.2–15.6 dB and 1.3–8.2 dB at 79–96 GHz when the Dicke switch is switched ON and OFF, respectively. Compared with the three‐stage LNA used in this design the measured in‐band noise figure (NF) of MEMS switched LNA is minimum 1.6 dB higher. To the authors’ knowledge, the experimental results represent a first time demonstration of a W‐band MEMS switched LNA monolithic microwave integrated circuit (MMIC) in a GaAs foundry process with a minimum NF of 5 dB. The proposed novel integration of such MEMS switched MMICs can enable more cost‐effective ways to realize high‐performance single‐chip mm‐wave reconfigurable radiometer front‐ends for space and security applications, for example. © 2015 Wiley Periodicals, Inc. Int J RF and Microwave CAE 25:639–646, 2015.

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Wide-band radio frequency micro electro-mechanical systems switches and switching networks using a gallium arsenide monolithic microwave-integrated circuits foundry process technology

Cited by 15 publications

References 6 publications

Reconfigurable RF Circuits and RF‐MEMS

Reconfigurable RF Circuits and RF‐MEMS

RF-MEMS reconfigurable GaAs MMICs and antennas for microwave/MM-wave applications

A W-band RF-MEMS switched LNA in a 70 nm mHEMT process

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