Wide-Band Monolithic Phase Shifter

Ayasli, Y.; Miller, Sonya K.; Mozzi, R. L.; Hanes, L.K.

doi:10.1109/tmtt.1984.1132919

Cited by 32 publications

(3 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…However, even though these distributed approaches can achieve true time delay along the line sections, their physical sizes make them impractical for integration with multiple arrays in a commercial IC process, especially below K-band ( 30 GHz) frequencies. The migrations from distributed networks to lumped-element configurations, such as synthetic transmission lines with varactors (and/or variable inductors) tuning [10]- [12], lumped hybrid-couplers with reflection loads [13]- [15], or the combined topologies of lumped low-pass filters and high-pass filters [16]- [18], seem to reduce the physical dimensions of the phase shifters with reasonable performance achieved. However, for fine phase quantization levels over wide operation bandwidth, the size of the lumped passive networks grows dramatically, mainly for the various on-chip inductors used, and is not suitable for integrated phased array systems on a chip.…”

mentioning

confidence: 99%

0.13-$\mu$m CMOS Phase Shifters for X-, Ku-, and K-Band Phased Arrays

Koh

Rebeiz

2007

IEEE J. Solid-State Circuits

357

112

View full text Add to dashboard Cite

mentioning

confidence: 99%

0.13-$\mu$m CMOS Phase Shifters for X-, Ku-, and K-Band Phased Arrays

Koh

Rebeiz

2007

IEEE J. Solid-State Circuits

357

112

View full text Add to dashboard Cite

“…The 45° phase shifter has a bridged‐T structure that can effectively determine the phase shift using the parallel resonance between the equivalent capacitor and the inductor in the off state of the FET (Figure 5B) [13]. Phase shifters with large values of 90° and 180° were designed using a high‐pass/loss‐pass structure (Figure 5C) [14]. Because this structure consists of two single‐pole–double‐throw switches and a filter structure, it suffers from an increased chip size and insertion loss while exhibiting better wideband performance.…”

Section: Multifunction Chip Designmentioning

confidence: 99%

Four‐channel GaAs multifunction chips with bottom RF interface for Ka‐band SATCOM antennas

2023

View full text Add to dashboard Cite

Receiver and transmitter monolithic microwave integrated circuit (MMIC) multifunction chips (MFCs) for active phased‐array antennas for Ka‐band satellite communication (SATCOM) terminals have been designed and fabricated using a 0.15‐μm GaAs pseudomorphic high‐electron mobility transistor (pHEMT) process. The MFCs consist of four‐channel radio frequency (RF) paths and a 4:1 combiner. Each channel provides several functions such as signal amplification, 6‐bit phase shifting, and 5‐bit attenuation with a 44‐bit serial‐to‐parallel converter (SPC). RF pads are implemented on the bottom side of the chip to remove the parasitic inductance induced by wire bonding. The area of the fabricated chips is 5.2 mm × 4.2 mm. The receiver chip exhibits a gain of 18 dB and a noise figure of 2.0 dB over a frequency range from 17 GHz to 21 GHz with a low direct current (DC) power of 0.36 W. The transmitter chip provides a gain of 20 dB and a 1‐dB gain compression point (P1dB) of 18.4 dBm over a frequency range from 28 GHz to 31 GHz with a low DC power of 0.85 W. The P1dB can be increased to 20.6 dBm at a higher bias of +4.5 V.

show abstract

“…하 지만 주파수에 대한 위상 오차가 줄어들어 주파수 특성 이 우수하다는 장점을 가진다. 이러한 구조를 High-Pass /Loss-Pass 구조 [12] 라 한다(그림 5(c)). …”

Section: 증폭기의 입출력 정합은 반사 손실 특성 개선을 위해 이득 정합을 수행하였다 입력 정합을 위해 커패시터(Cunclassified

A Low Power GaAs MMIC Multi-Function Chip for an X-Band Active Phased Array Radar System

Jeong¹,

Shin²,

Ju³

et al. 2014

The Journal of Korean Institute of Electromagnetic Engineering

View full text Add to dashboard Cite

An MMIC multi-function chip with a low DC power consumption for an X-band active phased array radar system has been designed and fabricated using a 0.5 μm GaAs p-HEMT commercial process. The multi-function chip provides several functions: 6-bit phase shifting, 6-bit attenuation, transmit/receive switching, and signal amplification. The fabricated multi-function chip with a compact size of 16 mm 2 (4 mm×4 mm) exhibits a gain of 10 dB and a P1dB of 14 dBm from 7 GHz to 11 GHz with a DC low power consumption of only 0.6 W. The RMS(Root Mean Square) errors for the 64 states of the 6-bit phase shift and attenuation were measured to 3° and 0.6 dB, respectively over the frequency.

show abstract

Wide-Band Monolithic Phase Shifter

Cited by 32 publications

References 4 publications

0.13-$\mu$m CMOS Phase Shifters for X-, Ku-, and K-Band Phased Arrays

0.13-$\mu$m CMOS Phase Shifters for X-, Ku-, and K-Band Phased Arrays

Four‐channel GaAs multifunction chips with bottom RF interface for Ka‐band SATCOM antennas

A Low Power GaAs MMIC Multi-Function Chip for an X-Band Active Phased Array Radar System

Contact Info

Product

Resources

About