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An S‐band multifunction chip with a simple interface for an active phased array base station antenna for next‐generation mobile communications is designed and fabricated using commercial 0.5‐μm GaAs pHEMT technology. To reduce the cost of the module assembly and to reduce the number of chip interfaces for a compact transmit/receive module, a digital serial‐to‐parallel converter and an active bias circuit are integrated into the designed chip. The chip can be controlled and driven using only five interfaces. With 6‐bit phase shifting and 6‐bit attenuation, it provides a wideband performance employing a shunt‐feedback technique for amplifiers. With a compact size of 16 mm2 (4 mm × 4 mm), the proposed chip exhibits a gain of 26 dB, a P1dB of 12 dBm, and a noise figure of 3.5 dB over a wide frequency range of 1.8 GHz to 3.2 GHz.

A C‐band 50 W high‐power microwave monolithic integrated circuit amplifier for use in a phased‐array radar system was designed and fabricated using commercial 0.25 μm AlGaN/GaN technology. This two‐stage amplifier can achieve a saturated output power of 50 W with higher than 35% power‐added efficiency and 22 dB small‐signal gain over a frequency range of 5.5 GHz to 6.2 GHz. With a compact 14.82 mm2 chip area, an output power density of 3.2 W/mm2 is demonstrated.

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