An S‐band multifunction chip with a simple interface for an active phased array base station antenna for next‐generation mobile communications is designed and fabricated using commercial 0.5‐μm GaAs pHEMT technology. To reduce the cost of the module assembly and to reduce the number of chip interfaces for a compact transmit/receive module, a digital serial‐to‐parallel converter and an active bias circuit are integrated into the designed chip. The chip can be controlled and driven using only five interfaces. With 6‐bit phase shifting and 6‐bit attenuation, it provides a wideband performance employing a shunt‐feedback technique for amplifiers. With a compact size of 16 mm2 (4 mm × 4 mm), the proposed chip exhibits a gain of 26 dB, a P1dB of 12 dBm, and a noise figure of 3.5 dB over a wide frequency range of 1.8 GHz to 3.2 GHz.
High performance vertical transition from DC to 70 GHz was proposed for system-on-package (SoP) applications. The trough line, slab line and shielded multilayer coplanar waveguides were employed to minimize the radiation loss, crosstalk and discontinuity of a conventional via vertical transition. The half square via pad was used in order to prevent unwanted coupling between the transmission lines of the vertical transition. The proposed vertical transition was made using a LTCC process. The manufactured single vertical transition showed a low insertion loss less than 0.7 dB and a reflection loss below -13 dB in the frequency range of DC to 70 GHz.
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm x 2.35mm) is designed to fully match 50-Ω input and output impedance. Keywords-GaAs pHEMT, high-power amplifer (HPA), monolithic microwave integrated circuit (MMIC) power amplifier I. INTRODUCTIONLow cost, light weight, high yield, and good reliability are the critical parameters for the successful development of modern communication applications.Ku-band power amplifier MMIC is one of the most important components for many commercial and military electronic systems. High efficiency and broad bandwidth are required to meet prime power, thermal and high data rate requirements for many of these systems, such as point-to-point radio networks, VSAT ground terminals, EW systems and test equipment. In addition to the high efficiency and broad bandwidth, high power, high gain, high linearity and small die size are demanded to the power amplifier.Recently published papers and products show steady progress in improving the efficiency and bandwidth of GaAs based Ku-band power amplifier MMICs [1]-[6]. However, broad bandwidth and high efficiency are required[7]-[8]. Higher output power MMICs based on GaN technology were reported[9]-[10]. In spite of the advantages, fabrication cost of GaN process is excessively higher than that of GaAs process.In this paper, the design and performance of the 3-stage Ku-band power amplifier MMIC with high efficiency and broad bandwidth are described.
The new vertical transition using the trough line, the slab line, and shielded multilayer coplanar waveguides (SMCPW) in order to implement the DC ∼ 50‐GHz band low loss LTCC hermetic surface mounting (SMT) MMIC package was developed. The trough line, the slab line, and the SMCPWs were employed in order to minimize the discontinuity of the conventional via vertical transition, and the radiation loss and crosstalk. The proposed vertical transition is constructed using the multiple transmission lines of the SMCPW1–trough line–slab line–SMCPW2–SMCPW3. The manufactured LTCC hermetic SMT MMIC package showed a low insertion loss less than 0.6 dB and a reflection loss less than −20 dB in the frequency range from DC to 53 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 24–29, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22973
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