Wide band gap II–VI selenides for short wavelength intersubband devices

Shen, Aidong; Charles, William; Li, B.S.; Franz, Kale J.; Gmachl, Claire F.; Zhang, Q.; Tamargo, M. C.

doi:10.1016/j.jcrysgro.2008.10.102

Cited by 8 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results indicate that CER may be used to accurately predict ISB transition energies of the ACQW structures while the results of FTIR directly represent the ISB transition properties of ACQW structures for QCL applications [2][3][4]7]. CER has been demonstrated to be a good complementary technique, as compared with the FTIR absorption which requires complex sample preparation, for characterization of the wide band gap II-VI ACQW structures for QCL applications.…”

mentioning

confidence: 92%

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Huang

Huang³

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

Contactless electroreflectance (CER) was used to characterize the possible optical transitions in a ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well (ACQW) structure grown by molecular beam epitaxy for quantum cascade laser (QCL) applications. CER spectrum revealed a wide range of the possible optical transitions in ACQW structure. The ground state transition was assigned by comparing with the photoluminescence emission signal taken from the same structure. A comprehensive analysis of the CER spectrum led to the identification of various interband transitions. The intersubband transitions were estimated and confirmed by FTIR measurements. The results demonstrate the potential of using CER as a complimentary technique for the contactless and nondestructive characterization of the wide band gap II‐VI ACQW structures for QCL applications (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

mentioning

confidence: 92%

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Huang

Huang³

et al. 2010

Phys. Status Solidi (c)

View full text Add to dashboard Cite

show abstract

“…Recently, we have shown that selenide-based wide band gap II-VI semiconductors are attractive alternatives for intersubband (ISB) devices, especially those working in the short wavelength range [13][14][15][16]. We have demonstrated that QWIPs with high performance can also be fabricated from ZnCdSe/ZnCdMgSe multiple quantum wells (MQWs) [17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

Chen

Kaya

Ravikumar

et al. 2016

Phys. Status Solidi C

View full text Add to dashboard Cite

The authors report, for the first time, the new two‐color quantum well infrared photodetectors (QWIPs) from a non‐III‐V semiconductor material system. The samples were grown on InP substrate by molecular beam epitaxy. X‐ray diffraction and photoluminescence measurements showed high structural and optical quality of the samples. Two intersubband (ISB) absorption peaks in two different wavelength regions are observed in Fourier transform infrared measurements. The two‐color photodetectors can be turned on separately or simultaneously in the two spectral regions. (© 2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

“…On the other hand, the alloy lattice can easily be matched with III–V alloy substrates for device applications . In addition, Shen et al () recently proposed the growth of engineered superlattices, employing ZnCdMgSe, in which inter‐subband transitions (ISB) can take place to build quantum cascade lasers (QCLs) able to operate from the near to the far infrared. The THz range is an area of growing interest for security and defense applications.…”

Section: Introductionmentioning

confidence: 99%

Ab initio structural and electronic band‐structure study of MgSe

Elsayed

Olguı́n

Cantarero

et al. 2015

Physica Status Solidi (b)

View full text Add to dashboard Cite

We present a careful and detailed ab initio study of the crystal structure and electronic band structure of different crystalline phases of MgSe. Calculations were performed using the full‐potential linear augmented plane wave method. To determine the crystal phase of the ground state of MgSe, we computed the total energy as a function of volume for the rock‐salt, zinc‐blende, wurtzite, and NiAs phases. From the optimized volume, and by using the Birch–Murnaghan equation of state the lattice parameters a0 false(c0false), the bulk moduli, and its first pressure derivative (B0 normaland B0′) for the different phases of MgSe were found. In our calculations, we have used the local density approach for the exchange–correlation part of the total energy. It was determined that in this approach the sequence of phase transformations under pressure is rock‐salt–NiAs–wurzite–zinc‐blende. However, we also found that under ambient conditions, the different studied phases for MgSe are energetically available. Using the modified Becke–Johnson exchange correlation potential, the calculated values of the bandgap were improved, and the results are comparable to existing experimental values for the zinc‐blende phase.

show abstract

Wide band gap II–VI selenides for short wavelength intersubband devices

Cited by 8 publications

References 12 publications

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

Ab initio structural and electronic band‐structure study of MgSe

Contact Info

Product

Resources

About

Wide band gap II–VI selenides for short wavelength intersubband devices

Cited by 8 publications

References 12 publications

Optical characterization of intersubband transitions in ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in ZnxCd1‐xSe/Znx′Cdy′Mg1‐x′‐y′Se asymmetric coupled quantum well structures by contactless electroreflectance

Growth and characterization of ZnCdSe/ZnCdMgSe two‐color quantum well infrared photodetectors

Ab initio structural and electronic band‐structure study of MgSe

Contact Info

Product

Resources

About

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance

Optical characterization of intersubband transitions in Zn_xCd_1‐xSe/Zn_x′Cd_y′Mg_{1‐x′‐y′}Se asymmetric coupled quantum well structures by contactless electroreflectance