Wide-band compact modeling of spiral inductors in RFICs

Integrated Silicon Microwave and Millimeterwave Passive Components and Functions

“…In 2000, a modified model (Figure 7(b)), more close to fabrication process and geometry of inductor, was proposed by (Yue & Wong, 2000). An other model (Figure 7(c)), taking into account electromagnetic coupling with silicon substrate were developed by (Melendy et al, 2002). But, a wide band model was proposed by (Lee et al, 2006-2), where intrinsic and extrinsic refer respectively to the inductor and to the environment (Figure 7(d)).…”

“…7. Models of planar inductors, (a) (Nguyen & Meyer 90), (b) (Yue & Wong, 2000), (c) (Melendy et al,2002), (d) (Lee et al, 2006-2) These more or less complex models, must take into account various physical phenomena and geometrical parameters, coming from the design or which can have an influence on the design. The geometrical parameters are: the thickness and the dielectric constant of insulator used in the BEOL, the width of conductors, the spacing between two conductors for a spiral inductor, the inner diameter of the coil, the turns number for spiral shape, vias ensuring the passage from one metal level to an other for inductors using several metal levels.…”

Resolving differences of parameter extraction methods for integrated inductor design and model validation

“…4, 5 and 6, respectively, using Eqs. (1)(2)(3)(4)(5) and (10-12) for an equivalent p-type network model with a grounded substrate node. When a floating substrate node is considered, all three curves coincide to the one calculated from the Z dd , as expected.…”

“…Widely accepted figures of merit for inductor performance are mainly the inductance and quality factor over the frequency range of interest. These are extracted based on a specific lumped equivalent model topology, like the well-established nine-element equivalent circuit [1][2][3][4]. Various definitions and formulas are utilized for the calculation of the inductance and quality factor and the results are strongly dependent upon the model topology used.…”

Characterization and modeling of silicon integrated spiral inductors for high-frequency applications

“…Although several papers concerning the characterization and modeling of integrated inductances have been published [1][2][3][4][5][6][7][8][9][10], few significant results have been achieved in the area of sub-nH inductances [11,12]. This topic is of major interest for high-frequency applications (Ku-, K-, and Ka-band), where the inductance values required by integrated circuits fall into the sub-nH range [13,14].…”