An integrated 13.56-MHz RFID tag in a printed organic complementary TFT technology on flexible substrateFiore, V.; Battiato, P.; Abdinia, S.; Jacobs, S.; Chartier, I.; Coppard, R.; Klink, G.; Cantatore, E.; Ragonese, E.; Palmisano, G. Document VersionAccepted manuscript including changes made at the peer-review stage Please check the document version of this publication:• A submitted manuscript is the author's version of the article upon submission and before peer-review. There can be important differences between the submitted version and the official published version of record. People interested in the research are advised to contact the author for the final version of the publication, or visit the DOI to the publisher's website.• The final author version and the galley proof are versions of the publication after peer review.• The final published version features the final layout of the paper including the volume, issue and page numbers. Link to publication Citation for published version (APA):Fiore, V., Battiato, P., Abdinia, S., Jacobs, S., Chartier, I., Coppard, R., ... Palmisano, G. (2015). An integrated 13.56-MHz RFID tag in a printed organic complementary TFT technology on flexible substrate. IEEE Transactions on Circuits and Systems I: Regular Papers, 62(6), 1668-1677. [7108060]. DOI: 10.1109/TCSI.2015 General rights Copyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.• Users may download and print one copy of any publication from the public portal for the purpose of private study or research.• You may not further distribute the material or use it for any profit-making activity or commercial gain • You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim.Download date: 12. May. 2018 TCAS-I 1611Abstract-This paper presents the first printed organic 13-MHz RFID on flexible substrate. The proposed solution includes a planar near field antenna bonded to an RFID tag, which is printed on flexible foil using an organic complementary TFT technology. Thanks to an active envelope detector, ASK modulation with modulation depth as low as 20% can be adopted to increase the available input power for the rectifier. The RFID functionality is demonstrated at the internally generated supply voltage of 24 V, for a reading range of 2-5 cm and a bit-rate up to 50 bit/s. With more than 250 transistors on the same foil, this work represents the most complex circuit ever published in a printed organic complementary TFT technology.Index Terms-ASK modulation, active detection, mixed analog-digital circuits modulation index, organic circuits, pentacene, polyimide, radio frequency identification, sub...

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This paper presents an organic sensor for ambient light monitoring fabricated on flexible plastic foil. The sensor exploits an organic photodiode whose photocurrent is linearly converted into an output voltage by a transconductance operational amplifier in a feedback configuration. The photodiode is based on an inkjet printed bulk heterojunction blend of P3HT/PCBM sandwiched between Au and Al electrodes, whereas the amplifier is implemented in a printed complementary organic TFT technology. Both the photodiode and the amplifier were fully characterized in stand-alone configuration. Then, the response of the assembled sensor was measured by using a commercial 12-V halogen lamp as light source. Experimental data demonstrated that the sensor is able to provide a linear detection of the incident light intensity up to 11000 lux.

A lumped scalable model for spiral inductors in silicon bipolar technology has been developed. The effect of three different cross sections on inductor performance was first investigated by comparing experimental measurements. Using both the results of this analysis and three-dimensional electromagnetic simulation guidelines, several circular inductors were integrated on a radial patterned ground shield for model validation purposes. The model employs a novel equation for series resistance with only one fitting parameter extracted from experimental measurements. All other model elements were related to technological and geometrical data by using rigorous analytical equations. The model was validated using one-and two-port measured performance parameters of 45 integrated inductors, and excellent agreement was found for all considered geometries up to frequencies well above self-resonance.

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In this work, the design of a high-frequency AM demodulator in a printed complementary organic technology is presented. The behaviour and the variability of printed circuits are predicted by means of accurate transistor modelling, statistical characterization, and Monte Carlo simulations. The effectiveness of the design approach is readily verified by comparing measurements and simulations of simple digital blocks as well as two differen- tial amplifiers. These amplifiers can be used as continuous-time comparators in the demodulator. In addition, the possibility of high-frequency rectification using the printed organic TFTs is shown by providing the experimental results of an envelope detector mea- sured under different load and input conditions. All the measurements are performed in air. Finally, the simulation of a complete AM demodulator system including the measured blocks is demonstrated

This paper exploits an effective approach to overcome the breakdown limitations of traditional galvanic isolators based on chip-scale isolation barriers, thus achieving a very high isolation rating (i.e., compliant with the reinforced isolation requirements). Such an approach is based on radio frequency (RF) planar coupling between two side-by-side co-packaged chips. Standard packaging along with proper assembling techniques can be profitably used to go beyond 20-kV surge voltage without using expensive or exotic isolation components. As a proof of concept, a bidirectional data transfer system based on RF planar coupling able to withstand an isolation rating as high as 25 kV has been designed in a low-cost standard 0.35-µm CMOS technology. Experimental measurements demonstrated a maximum data rate of 40 Mbit/s using a carrier frequency of about 1 GHz. The adopted approach also guarantees a common mode transient immunity (CMTI) of 250 kV/µs, which is a first-rate performance in view of next generation galvanic isolators for wide-bandgap power semiconductor devices, such as gallium nitride high-electron mobility transistors (GaN HEMTs) and silicon carbide (SiC) MOSFETs.

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